An investigation of structural and magnetotransport features of half-Heusler ScPtBi thin films

An investigation of structural and magnetotransport features of half-Heusler ScPtBi thin films

Článek WoS

Half-Heusler materials have grabbed enormous devotion from scientific community owing to their novel electrical, magnetic, and optical features. In this paper, we report on ScPtBi half-Heusler thin films grown at 200 and 300 ? on Ta/Si (100) substrates by magnetron co-sputtering. X-ray diffraction studies have proved a polycrystalline structure of the synthesized films. In addition, the film deposited at 300 ? has possessed a secondary PtBi phase. Cross-sectional microstructures and surface topographies of the films have been investigated via scanning transmission electron microscopy and scanning electron microscopy, respectively. The stoichiometric composition of the films has been investigated by X-ray photoelectron spectroscopy studies. Magnetotransport measurements, conducted by a conventional four-probe method in a temperature range of 5-300 K and at fields up to 9 T, have unveiled the existence of the weak antilocalization (WAL) effect in the examined samples. The phase coherence length, l(phi), and the coefficient alpha have been extracted from the Hikami-Larkin-Nagaoka (HLN) relation. It has been shown that the extracted alpha values are between 800 and 1000, which highlights that the origin of the WAL effect results from the strong spin-orbit coupling (SOC) nature of the studied films rather than from topologically protected surface states. The Hall measurements performed at room temperature have shown that the major charge carriers are electrons and their mobility has been identified as 61 cm(2).V-1.s(-1) and 113 cm(2).V-1.s(-1) for the film deposited at 200 ? and 300 ?, respectively.

Half-Heusler materials have grabbed enormous devotion from scientific community owing to their novel electrical, magnetic, and optical features. In this paper, we report on ScPtBi half-Heusler thin films grown at 200 and 300 ? on Ta/Si (100) substrates by magnetron co-sputtering. X-ray diffraction studies have proved a polycrystalline structure of the synthesized films. In addition, the film deposited at 300 ? has possessed a secondary PtBi phase. Cross-sectional microstructures and surface topographies of the films have been investigated via scanning transmission electron microscopy and scanning electron microscopy, respectively. The stoichiometric composition of the films has been investigated by X-ray photoelectron spectroscopy studies. Magnetotransport measurements, conducted by a conventional four-probe method in a temperature range of 5-300 K and at fields up to 9 T, have unveiled the existence of the weak antilocalization (WAL) effect in the examined samples. The phase coherence length, l(phi), and the coefficient alpha have been extracted from the Hikami-Larkin-Nagaoka (HLN) relation. It has been shown that the extracted alpha values are between 800 and 1000, which highlights that the origin of the WAL effect results from the strong spin-orbit coupling (SOC) nature of the studied films rather than from topologically protected surface states. The Hall measurements performed at room temperature have shown that the major charge carriers are electrons and their mobility has been identified as 61 cm(2).V-1.s(-1) and 113 cm(2).V-1.s(-1) for the film deposited at 200 ? and 300 ?, respectively.

ScPtBi half-Heusler; Magnetron sputtering; Thin film; Magneto-transport measurements; Strong spin-orbit coupling

ScPtBi half-Heusler; Magnetron sputtering; Thin film; Magneto-transport measurements; Strong spin-orbit coupling

POLAT, Ö.; MOHELSKÝ, I.; ARREGI URIBEETXEBARRIA, J.; HORÁK, M.; POLČÁK, J.; BUKVIŠOVÁ, K.; ZLÁMAL, J.; ŠIKOLA, T.

2023

01.05.2022

PERGAMON-ELSEVIER SCIENCE LTD

OXFORD

1873-4227

MATERIALS RESEARCH BULLETIN

149

1

Spojené státy americké

111696-1

111696-7

7

https://www.sciencedirect.com/science/article/abs/pii/S0025540821004931?via%3Dihub