Detail publikačního výsledku

An EMI Susceptibility Improved, Wide Temperature Range Bandgap Voltage Reference

KROLÁK, D.; HORSKÝ, P.

Originální název

An EMI Susceptibility Improved, Wide Temperature Range Bandgap Voltage Reference

Anglický název

An EMI Susceptibility Improved, Wide Temperature Range Bandgap Voltage Reference

Druh

Článek WoS

Originální abstrakt

This article presents a new electromagnetic compatibility improved bandgap voltage reference with a low-current consumption of only 3.2 μA. The reference is designed for automotive applications with an extended temperature range from −50 to 200 °C and a low electromagnetic interference (EMI) susceptibility. The designed reference comes from the well-known Brokaw bandgap topology utilizing only five bipolar junction transistors in a reference core with a collector current leakage compensation. We propose several novel EMI susceptibility improvements of the reference core with a new asymmetrical operational amplifier. Every improvement is discussed in detail and general recommendations, on how to decrease the bandgap EMI susceptibility, are presented. Simulation results are compared with measurements on a system on chip. Measurement results show dc voltage variation below 0.5% for 5 mW (7 dBm) supply EMI over the frequency range from 100 kHz to 1 GHz.

Anglický abstrakt

This article presents a new electromagnetic compatibility improved bandgap voltage reference with a low-current consumption of only 3.2 μA. The reference is designed for automotive applications with an extended temperature range from −50 to 200 °C and a low electromagnetic interference (EMI) susceptibility. The designed reference comes from the well-known Brokaw bandgap topology utilizing only five bipolar junction transistors in a reference core with a collector current leakage compensation. We propose several novel EMI susceptibility improvements of the reference core with a new asymmetrical operational amplifier. Every improvement is discussed in detail and general recommendations, on how to decrease the bandgap EMI susceptibility, are presented. Simulation results are compared with measurements on a system on chip. Measurement results show dc voltage variation below 0.5% for 5 mW (7 dBm) supply EMI over the frequency range from 100 kHz to 1 GHz.

Klíčová slova

Bandgap voltage reference, Brokaw bandgap voltage reference, bandgap reference, electromagnetic compatibility, electromagnetic interference, integrated circuit, voltage reference

Klíčová slova v angličtině

Bandgap voltage reference, Brokaw bandgap voltage reference, bandgap reference, electromagnetic compatibility, electromagnetic interference, integrated circuit, voltage reference

Autoři

KROLÁK, D.; HORSKÝ, P.

Rok RIV

2025

Vydáno

16.04.2024

Nakladatel

IEEE

Místo

Piscataway, USA

ISSN

1558-187X

Periodikum

IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY

Svazek

1

Číslo

1

Stát

Spojené státy americké

Strany od

1

Strany do

8

Strany počet

8

URL

https://ieeexplore.ieee.org/document/10502225

BibTex

@article{BUT177757,
  author="David {Krolák} and Pavel {Horský}",
  title="An EMI Susceptibility Improved, Wide Temperature Range Bandgap Voltage Reference",
  journal="IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY",
  year="2024",
  volume="1",
  number="1",
  pages="1--8",
  doi="10.1109/TEMC.2024.3381816",
  issn="0018-9375",
  url="https://ieeexplore.ieee.org/document/10502225"
}