Circuit and method for programming a one-time programmable memory

Circuit and method for programming a one-time programmable memory

Patent

Programming a fuse for a one-time programmable (OTP) memory can require applying a programming current for a programming period to increase a resistance of the fuse. It may be desirable for the resistance to be very high. A very high resistance may be achieved by applying a high programming current to form a void in the fuse. Applying the high programming current too long after the void is formed, however, may lead to uncontrolled variations and ultimately damage. Accordingly, it may be desirable to end the programming period sometime after the void is formed but before the uncontrolled variations begin. Ideally the programming period is ended at a time at which the programming current is minimum. The disclosed circuits and method provide a means to estimate this time without requiring the complexity of sensing very low levels of programming current.

Programming a fuse for a one-time programmable (OTP) memory can require applying a programming current for a programming period to increase a resistance of the fuse. It may be desirable for the resistance to be very high. A very high resistance may be achieved by applying a high programming current to form a void in the fuse. Applying the high programming current too long after the void is formed, however, may lead to uncontrolled variations and ultimately damage. Accordingly, it may be desirable to end the programming period sometime after the void is formed but before the uncontrolled variations begin. Ideally the programming period is ended at a time at which the programming current is minimum. The disclosed circuits and method provide a means to estimate this time without requiring the complexity of sensing very low levels of programming current.

OTP; onetime programmable memory; trim; closed loop; polysilicon fuse; void; melting point, electromigration

OTP; onetime programmable memory; trim; closed loop; polysilicon fuse; void; melting point, electromigration

11183258

07.12.2020

21.11.2021

21.11.2041

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC Phoenix

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