Detail publikačního výsledku

Kinetics of Guided Growth of Horizontal GaN Nanowires on Flat and Faceted Sapphire Surfaces

ROTHMAN, A.; MANIŠ, J.; DUBROVSKII, V.; ŠIKOLA, T.; MACH, J.; JOSLEVICH, E.

Originální název

Kinetics of Guided Growth of Horizontal GaN Nanowires on Flat and Faceted Sapphire Surfaces

Anglický název

Kinetics of Guided Growth of Horizontal GaN Nanowires on Flat and Faceted Sapphire Surfaces

Druh

Článek WoS

Originální abstrakt

The bottom-up assembly of nanowires facilitates the control of their dimensions, structure, orientation and physical properties. Surface-guided growth of planar nanowires has been shown to enable their assembly and alignment on substrates during growth, thus eliminating the need for additional post-growth processes. However, accurate control and understanding of the growth of the planar nanowires were achieved only recently, and only for ZnSe and ZnS nanowires. Here, we study the growth kinetics of surface-guided planar GaN nanowires on flat and faceted sapphire surfaces, based on the previous growth model. The data are fully consistent with the same model, presenting two limiting regimes-either the Gibbs-Thomson effect controlling the growth of the thinner nanowires or surface diffusion controlling the growth of thicker ones. The results are qualitatively compared with other semiconductors surface-guided planar nanowires materials, demonstrating the generality of the growth mechanism. The rational approach enabled by this general model provides better control of the nanowire (NW) dimensions and expands the range of materials systems and possible application of NW-based devices in nanotechnology.

Anglický abstrakt

The bottom-up assembly of nanowires facilitates the control of their dimensions, structure, orientation and physical properties. Surface-guided growth of planar nanowires has been shown to enable their assembly and alignment on substrates during growth, thus eliminating the need for additional post-growth processes. However, accurate control and understanding of the growth of the planar nanowires were achieved only recently, and only for ZnSe and ZnS nanowires. Here, we study the growth kinetics of surface-guided planar GaN nanowires on flat and faceted sapphire surfaces, based on the previous growth model. The data are fully consistent with the same model, presenting two limiting regimes-either the Gibbs-Thomson effect controlling the growth of the thinner nanowires or surface diffusion controlling the growth of thicker ones. The results are qualitatively compared with other semiconductors surface-guided planar nanowires materials, demonstrating the generality of the growth mechanism. The rational approach enabled by this general model provides better control of the nanowire (NW) dimensions and expands the range of materials systems and possible application of NW-based devices in nanotechnology.

Klíčová slova

gallium nitride; nanowires; guided growth; surface-diffusion

Klíčová slova v angličtině

gallium nitride; nanowires; guided growth; surface-diffusion

Autoři

ROTHMAN, A.; MANIŠ, J.; DUBROVSKII, V.; ŠIKOLA, T.; MACH, J.; JOSLEVICH, E.

Rok RIV

2022

Vydáno

01.03.2021

Nakladatel

MDPI

Místo

BASEL

ISSN

2079-4991

Periodikum

Nanomaterials

Svazek

11

Číslo

3

Stát

Švýcarská konfederace

Strany od

1

Strany do

9

Strany počet

9

URL

https://www.mdpi.com/2079-4991/11/3/624

Plný text v Digitální knihovně

http://hdl.handle.net/11012/203258

BibTex

@article{BUT174913,
  author="Amnon {Rothman} and Jaroslav {Maniš} and Vladimir G. {Dubrovskii} and Tomáš {Šikola} and Jindřich {Mach} and Ernesto {Joslevich}",
  title="Kinetics of Guided Growth of Horizontal GaN Nanowires on Flat and Faceted Sapphire Surfaces",
  journal="Nanomaterials",
  year="2021",
  volume="11",
  number="3",
  pages="1--9",
  doi="10.3390/nano11030624",
  url="https://www.mdpi.com/2079-4991/11/3/624"
}

Dokumenty

2021 (Maniš) Nanomat