Detail publikačního výsledku

Obtaining Thin Films Of Aln By Atomic Layer Deposition Using Nh3 Or N2h4 As Precursors

DALLAEV, R.

Originální název

Obtaining Thin Films Of Aln By Atomic Layer Deposition Using Nh3 Or N2h4 As Precursors

Anglický název

Obtaining Thin Films Of Aln By Atomic Layer Deposition Using Nh3 Or N2h4 As Precursors

Druh

Konferenční sborník (ne stať)

Originální abstrakt

In this work we used atomic layer deposition (ALD) method to obtain thin films of AlN using tris(diethylamido)aluminum (III) (TDEAA) with hydrazine (N2H4) or ammonia (NH3) as precursors. Elemental analysis of the film deposited by ALD TDEAA /N2H4 at 200 °C showed the presence of carbon impurities ~ 1.4 at%, oxygen ~ 3.2 at.% and hydrogen 22.6 at.%. The atomic concentration ratio of N/Al was ~ 1.3. The residual impurities content with N2H4 was lower than with NH3. In general, it has been confirmed that hydrazine has a more preferable surface thermochemistry than ammonia.

Anglický abstrakt

In this work we used atomic layer deposition (ALD) method to obtain thin films of AlN using tris(diethylamido)aluminum (III) (TDEAA) with hydrazine (N2H4) or ammonia (NH3) as precursors. Elemental analysis of the film deposited by ALD TDEAA /N2H4 at 200 °C showed the presence of carbon impurities ~ 1.4 at%, oxygen ~ 3.2 at.% and hydrogen 22.6 at.%. The atomic concentration ratio of N/Al was ~ 1.3. The residual impurities content with N2H4 was lower than with NH3. In general, it has been confirmed that hydrazine has a more preferable surface thermochemistry than ammonia.

Klíčová slova

atomic layer deposition, aluminum nitride, wide band-gap, thin films fabrication, semiconucting materials, hydrazine, ammonia, tris(diethylamido)aluminum

Klíčová slova v angličtině

atomic layer deposition, aluminum nitride, wide band-gap, thin films fabrication, semiconucting materials, hydrazine, ammonia, tris(diethylamido)aluminum

Autoři

DALLAEV, R.

Rok RIV

2022

Vydáno

18.06.2018

ISBN

978-80-214-5614-3

Kniha

Proceedings of the 24th Conference STUDENT EEICT 2018

Strany počet

5

BibTex

@proceedings{BUT172599,
  editor="Rashid {Dallaev}",
  title="Obtaining Thin Films Of Aln By Atomic Layer Deposition Using Nh3 Or N2h4 As Precursors",
  year="2018",
  pages="5",
  isbn="978-80-214-5614-3"
}