Detail publikačního výsledku

Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods

DALLAEV, R.

Originální název

Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods

Anglický název

Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods

Druh

Článek WoS

Originální abstrakt

Hydrogen impregnation is one of the main sources of contamination in AlN thin films obtained by atomic layer deposition method (ALD) as many studies report. Such impurities can be potentially detrimental to mechanical and electrical properties of the material. In this study methods belonging to ion-beam analysis (IBA) group, namely: elastic recoil detection analysis (ERDA), nuclear reaction analysis (NRA) and secondary-ion mass spectrometry (SIMS) were utilized to examine AlN thin films obtained by plasma-enhanced atomic layer deposition (PE-ALD) with use of trimethylaluminium (TMA) and N2+H2 gas mixture as precursors. Several depositions of AlN layers were carried out with different values of N2+H2 flux intensity (20, 100, 150 sccm) and TMA pulse (0.06, 0.12, 0.15 s) in order to investigate whether such alterations would produce any effect on the resulting films. Data obtained within the scope of this study suggest that AlN grown by PE-ALD exhibit rather low amounts of hydrogen impurities, especially when compared to thermal ALD. Furthermore, the effect of high-temperature treatment in N2 atmosphere was studied and was found out to produce a positive effect on the chemical composition of AlN films.

Anglický abstrakt

Hydrogen impregnation is one of the main sources of contamination in AlN thin films obtained by atomic layer deposition method (ALD) as many studies report. Such impurities can be potentially detrimental to mechanical and electrical properties of the material. In this study methods belonging to ion-beam analysis (IBA) group, namely: elastic recoil detection analysis (ERDA), nuclear reaction analysis (NRA) and secondary-ion mass spectrometry (SIMS) were utilized to examine AlN thin films obtained by plasma-enhanced atomic layer deposition (PE-ALD) with use of trimethylaluminium (TMA) and N2+H2 gas mixture as precursors. Several depositions of AlN layers were carried out with different values of N2+H2 flux intensity (20, 100, 150 sccm) and TMA pulse (0.06, 0.12, 0.15 s) in order to investigate whether such alterations would produce any effect on the resulting films. Data obtained within the scope of this study suggest that AlN grown by PE-ALD exhibit rather low amounts of hydrogen impurities, especially when compared to thermal ALD. Furthermore, the effect of high-temperature treatment in N2 atmosphere was studied and was found out to produce a positive effect on the chemical composition of AlN films.

Klíčová slova

aluminum nitride; hydrogen impurities; plasma-enhanced atomic layer deposition; elastic recoil detection analysis; nuclear reaction analysis; secondary-ion mass spectrometry

Klíčová slova v angličtině

aluminum nitride; hydrogen impurities; plasma-enhanced atomic layer deposition; elastic recoil detection analysis; nuclear reaction analysis; secondary-ion mass spectrometry

Autoři

DALLAEV, R.

Rok RIV

2022

Vydáno

17.08.2021

Nakladatel

Elsevier

ISSN

0042-207X

Periodikum

Vacuum

Svazek

193

Číslo

1

Stát

Spojené království Velké Británie a Severního Irska

Strany od

1

Strany do

9

Strany počet

9

URL

https://www.sciencedirect.com/science/article/pii/S0042207X21004826?via%3Dihub

Plný text v Digitální knihovně

http://hdl.handle.net/

BibTex

@article{BUT172277,
  author="Rashid {Dallaev}",
  title="Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods",
  journal="Vacuum",
  year="2021",
  volume="193",
  number="1",
  pages="1--9",
  doi="10.1016/j.vacuum.2021.110533",
  issn="0042-207X",
  url="https://www.sciencedirect.com/science/article/pii/S0042207X21004826?via%3Dihub"
}