Detail publikace

Efficiency optimization of totem pole PFC with Gallium Nitride semiconductors

ŠÍR, M. FENO, I.

Originální název

Efficiency optimization of totem pole PFC with Gallium Nitride semiconductors

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

Novel Gallium Nitride wide bandgap semiconductor devices are capable of improving efficiency of power converters. This article presents a practical optimisation of GaN converter application in the totem-pole power factor conversion converter. As the bottom side cooled devices are used, the article shows integration of switching device and gate driver on a single insulated metal substrate board, attractive for high power density power supply solutions. Measured efficiency data together with analysis of losses distribution and optimization at specific operating conditions are included. Design files of printed circuit board, created in free tool KiCad, used for evaluated prototype are part of this publication.

Klíčová slova

power electronics; GaN; GaN totem pole; GaN efficiency optimization; GaN cooling; GaN on insulated metal substrate IMS

Autoři

ŠÍR, M.; FENO, I.

Vydáno

1. 6. 2021

Nakladatel

WYDAWNICTWO SIGMA-NOT

Místo

WARSAW

ISSN

0033-2097

Periodikum

Przeglad Elektrotechniczny

Ročník

2021

Číslo

6

Stát

Polská republika

Strany od

39

Strany do

43

Strany počet

5

URL

http://pe.org.pl/abstract_pl.php?nid=12596&lang=1

Plný text v Digitální knihovně

http://hdl.handle.net/11012/203016

BibTex

@article{BUT170916,
  author="Michal {Šír} and Ivan {Feno}",
  title="Efficiency optimization of totem pole PFC with Gallium Nitride semiconductors",
  journal="Przeglad Elektrotechniczny",
  year="2021",
  volume="2021",
  number="6",
  pages="39--43",
  doi="10.15199/48.2021.06.07",
  issn="0033-2097",
  url="http://pe.org.pl/abstract_pl.php?nid=12596&lang=1"
}