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TOMÁNEK, P., OTEVŘELOVÁ, D., GRMELA, L., BRÜSTLOVÁ, J., DOBIS, P.
Originální název
Local near-field scanning optical microscopy and spectroscopy of nanostructures
Anglický název
Druh
Stať ve sborníku v databázi WoS či Scopus
Originální abstrakt
Visible and near infrared Scanning Near Field Optical Microscopy (SNOM) was used to characterize nanostructured semiconductor materials and structures. SNOM is a relatively new technique that combines the versatility of optical microscopy with the resolution of a scanning probe microscope. Light coupled into a tapered optical fiber is used for excitation. The fiber probe is scanned over the sample while being held ~10 nm above the surface. At this point, any number of high resolution (~100 nm) optical measurements can be made. In this work, the SNOM-induced photocurrent in GaAs devices was measured.
Anglický abstrakt
Klíčová slova
nanostructures, near-field spectroscopy, local optical properties, local photolumine-scence, locally induced photocurrent
Klíčová slova v angličtině
Autoři
Vydáno
10.02.2005
Nakladatel
Brno University of Technology
Místo
Brno
ISBN
80-214-2793-0
Kniha
Nano´04
Strany od
188
Strany do
193
Strany počet
6
BibTex
@inproceedings{BUT17006, author="Pavel {Tománek} and Dana {Otevřelová} and Lubomír {Grmela} and Jitka {Brüstlová} and Pavel {Dobis}", title="Local near-field scanning optical microscopy and spectroscopy of nanostructures", booktitle="Nano´04", year="2005", pages="188--193", publisher="Brno University of Technology", address="Brno", isbn="80-214-2793-0" }