Detail publikačního výsledku

Aluminum nitride based piezoelectric harvesters

GABLECH, I.; KLEMPA, J.; PEKÁREK, J.; VYROUBAL, P.; KUNZ, J.; NEUŽIL, P.

Originální název

Aluminum nitride based piezoelectric harvesters

Anglický název

Aluminum nitride based piezoelectric harvesters

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

This work demonstrates the fabrication of simple of AlN-based piezoelectric energy harvesters (PEH), made of cantilevers with thin films prepared by ion beam-assisted deposition. The preferentially (001) orientated AlN thin films have exceptionally high piezoelectric coefficients of (7.33 +/- 0.08) pC.N-1. The fabrication of PEH was done using only three lithography steps, employing conventional silicon substrate with precise control of the cantilever and it's mass thicknesses. The AlN deposition was done at a temperature of approximate to 330 degrees C which makes it compatible with complementary metal oxide semiconductor technology (CMOS). The PEH cantilever deflection and efficiency were characterized using both laser interferometry and a vibration shaker, respectively. This technology could become useful for future CMOS-based energy harvesters integrated on chip with circuits.

Anglický abstrakt

This work demonstrates the fabrication of simple of AlN-based piezoelectric energy harvesters (PEH), made of cantilevers with thin films prepared by ion beam-assisted deposition. The preferentially (001) orientated AlN thin films have exceptionally high piezoelectric coefficients of (7.33 +/- 0.08) pC.N-1. The fabrication of PEH was done using only three lithography steps, employing conventional silicon substrate with precise control of the cantilever and it's mass thicknesses. The AlN deposition was done at a temperature of approximate to 330 degrees C which makes it compatible with complementary metal oxide semiconductor technology (CMOS). The PEH cantilever deflection and efficiency were characterized using both laser interferometry and a vibration shaker, respectively. This technology could become useful for future CMOS-based energy harvesters integrated on chip with circuits.

Klíčová slova

MEMS, Harvesters, AlN

Klíčová slova v angličtině

MEMS, Harvesters, AlN

Autoři

GABLECH, I.; KLEMPA, J.; PEKÁREK, J.; VYROUBAL, P.; KUNZ, J.; NEUŽIL, P.

Rok RIV

2021

Vydáno

02.12.2019

Nakladatel

IEEE

Místo

NEW YORK

ISBN

978-1-7281-5638-5

Kniha

19th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (Power MEMS) Conference Proceedings

Strany od

1

Strany do

4

Strany počet

4

BibTex

@inproceedings{BUT166135,
  author="Imrich {Gablech} and Jaroslav {Klempa} and Jan {Pekárek} and Petr {Vyroubal} and Jan {Kunz} and Pavel {Neužil}",
  title="Aluminum nitride based piezoelectric harvesters",
  booktitle="19th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (Power MEMS)  Conference Proceedings",
  year="2019",
  pages="1--4",
  publisher="IEEE",
  address="NEW YORK",
  isbn="978-1-7281-5638-5"
}