Detail publikačního výsledku

Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN – Numerical Analyses by Quantum Transport

TANIZAKI, H., YAMADA, M., PAVELKA, J.,

Originální název

Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN – Numerical Analyses by Quantum Transport

Anglický název

Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN – Numerical Analyses by Quantum Transport

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

Electron mobility, charge carrier concentration, resistivity and Hooge noise parameter of epitaxial n-GaN layer was analysed in terms of several scattering mechanisms and Handel quantum theory of noise. Numerical model in temperature range 20-300K was compared with experimental results of noise and Hall measurements and we found good agreement.

Anglický abstrakt

Electron mobility, charge carrier concentration, resistivity and Hooge noise parameter of epitaxial n-GaN layer was analysed in terms of several scattering mechanisms and Handel quantum theory of noise. Numerical model in temperature range 20-300K was compared with experimental results of noise and Hall measurements and we found good agreement.

Klíčová slova v angličtině

GaN, scattering, mobility

Autoři

TANIZAKI, H., YAMADA, M., PAVELKA, J.,

Vydáno

01.01.2002

Nakladatel

Meisei Univeristy

Místo

Tokio

Kniha

Proceedings of the 13th Symposium on Advanced Materials

Strany od

132

Strany počet

4

BibTex

@inproceedings{BUT16522,
  author="H. {Tanizaki} and M. {Yamada} and Jan {Pavelka} and Nobuhisa {Tanuma} and H. {Tanoue} and K. {Tomisawa} and Munecazu {Tacano}",
  title="Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN – Numerical Analyses by Quantum Transport",
  booktitle="Proceedings of the 13th Symposium on Advanced Materials",
  year="2002",
  pages="4",
  publisher="Meisei Univeristy",
  address="Tokio"
}