Detail publikačního výsledku

Effect of gamma radiation on properties and performance of GaAs based solar cells

PAPEŽ, N.; GAJDOŠ, A.; SOBOLA, D.; DALLAEV, R.; ŠKARVADA, P.; MACKŮ, R.; GRMELA, L.

Originální název

Effect of gamma radiation on properties and performance of GaAs based solar cells

Anglický název

Effect of gamma radiation on properties and performance of GaAs based solar cells

Druh

Článek WoS

Originální abstrakt

The structure and properties of gallium arsenide photovoltaic cells were investigated using a wide range of analytical methods. Solar cells were exposed to intense gamma irradiation with a dose of 500 kGy. The radioactive isotope Cobalt-60 was used as the emitter. Fourier transform infrared spectroscopy (FTIR), ellipsometry, and spectrophotometry were used as optical measurement methods for observing the shift of permittivity, reflectance, and other surface investigation. Changes in thin-film composition were also analyzed by secondary-ion mass spectrometry (SIMS) by surface sputtering. Electrical characteristics were also observed. Minority carrier properties, junctions, or defects in semiconductor were investigated by scanning electron microscopy (SEM) with electron beam-induced current method (EBIC). Complementarily was proved diffusion of metals into thin layers of GaAs structure. This phenomenon affects the overall performance of the solar cell.

Anglický abstrakt

The structure and properties of gallium arsenide photovoltaic cells were investigated using a wide range of analytical methods. Solar cells were exposed to intense gamma irradiation with a dose of 500 kGy. The radioactive isotope Cobalt-60 was used as the emitter. Fourier transform infrared spectroscopy (FTIR), ellipsometry, and spectrophotometry were used as optical measurement methods for observing the shift of permittivity, reflectance, and other surface investigation. Changes in thin-film composition were also analyzed by secondary-ion mass spectrometry (SIMS) by surface sputtering. Electrical characteristics were also observed. Minority carrier properties, junctions, or defects in semiconductor were investigated by scanning electron microscopy (SEM) with electron beam-induced current method (EBIC). Complementarily was proved diffusion of metals into thin layers of GaAs structure. This phenomenon affects the overall performance of the solar cell.

Klíčová slova

gallium arsenide; radiation; cobalt-60; ebic; sims; ellipsometry; electroluminescence; sims

Klíčová slova v angličtině

gallium arsenide; radiation; cobalt-60; ebic; sims; ellipsometry; electroluminescence; sims

Autoři

PAPEŽ, N.; GAJDOŠ, A.; SOBOLA, D.; DALLAEV, R.; ŠKARVADA, P.; MACKŮ, R.; GRMELA, L.

Rok RIV

2021

Vydáno

10.06.2020

Nakladatel

Elsevier B.V.

Místo

Netherlands

ISSN

0169-4332

Periodikum

APPLIED SURFACE SCIENCE

Svazek

527

Číslo

146766

Stát

Nizozemsko

Strany od

135

Strany do

146

Strany počet

11

URL

https://www.sciencedirect.com/science/article/pii/S0169433220315233

Plný text v Digitální knihovně

http://hdl.handle.net/

BibTex

@article{BUT164225,
  author="Nikola {Papež} and Adam {Gajdoš} and Dinara {Sobola} and Rashid {Dallaev} and Pavel {Škarvada} and Robert {Macků} and Lubomír {Grmela}",
  title="Effect of gamma radiation on properties and performance of GaAs based solar cells",
  journal="APPLIED SURFACE SCIENCE",
  year="2020",
  volume="527",
  number="146766",
  pages="135--146",
  doi="10.1016/j.apsusc.2020.146766",
  issn="0169-4332",
  url="https://www.sciencedirect.com/science/article/pii/S0169433220315233"
}