Detail publikačního výsledku

Investigation of structure of AlN thin films using Fourier-transform infrared spectroscopy

DALLAEV, R.; PAPEŽ, N.; SOBOLA, D.; RAMAZANOV, S.; SEDLÁK, P.

Originální název

Investigation of structure of AlN thin films using Fourier-transform infrared spectroscopy

Anglický název

Investigation of structure of AlN thin films using Fourier-transform infrared spectroscopy

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

This study focuses on structural imperfections caused by hydrogen impurities in AlN thin films obtained using atomic layer deposition method (ALD). Currently, there is a severe lack of studies regarding the presence of hydrogen in the bulk of AlN films. Fourier-transform infrared spectroscopy (FTIR) is one of the few methods that allow detection bonds of light elements, in particular - hydrogen. Hydrogen is known to be a frequent contaminant in AlN films grown by ALD method, it may form different bonds with nitrogen, e.g. amino (–NH2) or imide (–NH) groups, which impair the quality of the resulting film. Which is why, it is important to investigate the phenomenon of hydrogen as well as to search for the suitable methods to eliminate or at least reduce its quantity. In this work several samples have been prepared using different precursors, substrates and deposition parameters and characterized using FTIR and additional techniques such as AFM, XPS and EDS to provide a comparative and comprehensive analysis of topography, morphology and chemical composition of AlN thin films.

Anglický abstrakt

This study focuses on structural imperfections caused by hydrogen impurities in AlN thin films obtained using atomic layer deposition method (ALD). Currently, there is a severe lack of studies regarding the presence of hydrogen in the bulk of AlN films. Fourier-transform infrared spectroscopy (FTIR) is one of the few methods that allow detection bonds of light elements, in particular - hydrogen. Hydrogen is known to be a frequent contaminant in AlN films grown by ALD method, it may form different bonds with nitrogen, e.g. amino (–NH2) or imide (–NH) groups, which impair the quality of the resulting film. Which is why, it is important to investigate the phenomenon of hydrogen as well as to search for the suitable methods to eliminate or at least reduce its quantity. In this work several samples have been prepared using different precursors, substrates and deposition parameters and characterized using FTIR and additional techniques such as AFM, XPS and EDS to provide a comparative and comprehensive analysis of topography, morphology and chemical composition of AlN thin films.

Klíčová slova

thin-films, aluminum nitride, Fourier-transform infrared spectroscopy, hydrogen impurities, structural analysis

Klíčová slova v angličtině

thin-films, aluminum nitride, Fourier-transform infrared spectroscopy, hydrogen impurities, structural analysis

Autoři

DALLAEV, R.; PAPEŽ, N.; SOBOLA, D.; RAMAZANOV, S.; SEDLÁK, P.

Rok RIV

2021

Vydáno

19.02.2020

Nakladatel

Elsevier

Kniha

Procedia Structural Integrity

ISSN

2452-3216

Periodikum

Procedia Structural Integrity

Svazek

23

Číslo

1

Stát

Italská republika

Strany od

601

Strany do

606

Strany počet

6

URL

https://www.sciencedirect.com/science/article/pii/S2452321620302195

Plný text v Digitální knihovně

http://hdl.handle.net/11012/193488

BibTex

@inproceedings{BUT162370,
  author="Rashid {Dallaev} and Nikola {Papež} and Dinara {Sobola} and Shihgasan {Ramazanov} and Petr {Sedlák}",
  title="Investigation of structure of AlN thin films using Fourier-transform infrared spectroscopy",
  booktitle="Procedia Structural Integrity",
  year="2020",
  journal="Procedia Structural Integrity",
  volume="23",
  number="1",
  pages="601--606",
  publisher="Elsevier",
  doi="10.1016/j.prostr.2020.01.152",
  issn="2452-3216",
  url="https://www.sciencedirect.com/science/article/pii/S2452321620302195"
}

Dokumenty

1-s2.0-S2452321620302195-main