Detail publikace

Development of HfO2/Al2O3 Stack for On-Chip Capacitor Applications

HRDÝ, R. PRÁŠEK, J. FILLNER, P. VANČÍK, S. SCHNEIDER, M. HUBÁLEK, J. SCHMID, U.

Originální název

Development of HfO2/Al2O3 Stack for On-Chip Capacitor Applications

Anglický název

Development of HfO2/Al2O3 Stack for On-Chip Capacitor Applications

Jazyk

en

Originální abstrakt

We presented the development and characterization of high-k stack HfO2/Al2O3 capacitor, fabricated directly on chip. The capacitor is based on nanolaminate material directly grown by plasma-assisted Atomic Layer Deposition (ALD) in a single reactor chamber. The deposition process was performed at a single temperature (250°C). We tested the various numbers of layers in the stack, compared the electrical and material characterizations. Using the optimal deposition conditions, we obtained a structure with nanolaminates of single thickens 5Å, capacitance density of 1.10-12 F.μm-2 and leakage current density of 1.10-9 A.cm-2

Anglický abstrakt

We presented the development and characterization of high-k stack HfO2/Al2O3 capacitor, fabricated directly on chip. The capacitor is based on nanolaminate material directly grown by plasma-assisted Atomic Layer Deposition (ALD) in a single reactor chamber. The deposition process was performed at a single temperature (250°C). We tested the various numbers of layers in the stack, compared the electrical and material characterizations. Using the optimal deposition conditions, we obtained a structure with nanolaminates of single thickens 5Å, capacitance density of 1.10-12 F.μm-2 and leakage current density of 1.10-9 A.cm-2

Dokumenty

BibTex


@inproceedings{BUT161142,
  author="Radim {Hrdý} and Jan {Prášek} and Patrik {Fillner} and Silvester {Vančík} and Michael {Schneider} and Jaromír {Hubálek} and Ulrich {Schmid}",
  title="Development of HfO2/Al2O3 Stack for On-Chip Capacitor Applications
",
  annote="We presented the development and characterization of high-k stack HfO2/Al2O3 capacitor, fabricated directly on chip. The capacitor is based on nanolaminate material directly grown by plasma-assisted Atomic Layer Deposition (ALD) in a single reactor chamber. The deposition process was performed at a single temperature (250°C). We tested the various numbers of layers in the stack, compared the electrical and material characterizations. Using the optimal deposition conditions, we obtained a structure with nanolaminates of single thickens 5Å, capacitance density of 1.10-12 F.μm-2 and leakage current density of 1.10-9 A.cm-2",
  address="IEEE Computer Society",
  booktitle="42st International Spring Seminar on Electronics Technology ISSE2019",
  chapter="161142",
  doi="10.1109/ISSE.2019.8810156",
  howpublished="electronic, physical medium",
  institution="IEEE Computer Society",
  year="2019",
  month="august",
  pages="1--4",
  publisher="IEEE Computer Society",
  type="conference paper"
}