Detail publikačního výsledku

Stereometric Analysis of Effects of Heat Stressing on Micromorphology of Si Single Crystals

DALLAEV, R.; STACH, S.; TALU, S.; SOBOLA, D.; MÉNDEZ-ALBORES, A.; TREJO, G.; GRMELA, L.

Originální název

Stereometric Analysis of Effects of Heat Stressing on Micromorphology of Si Single Crystals

Anglický název

Stereometric Analysis of Effects of Heat Stressing on Micromorphology of Si Single Crystals

Druh

Článek Scopus

Originální abstrakt

The purpose of this work is study of silicon single crystal wafer thermal stability in correlation with three-dimensional (3D) surfacecharacterization using atomic force microscopy (AFM). The samples were heated up to 500 °C for the period of 2 and 4 h. Then thesurfaces of wafers were processed by ion beam. The difference in surface structure of processed and reference samples wasinvestigated. Structural and compositional studies are provided by X-ray photoelectron spectroscopy. Stereometric analysis wascarried out on the basis of AFM-data, for stressed and unstressed samples. The results of stereometric analysis show the correlationof statistical characteristics of surface topography and structure of surface and near-surface area. Characterization techniques incombination with data processing methodology are essential for description of the surface condition. All the extracted topographicparameters and texture features have demonstrated a deeper analysis that can be used for new micro-topography models. (PDF) Stereometric Analysis of Effects of Heat Stressing on Micromorphology of Si Single Crystals.

Anglický abstrakt

The purpose of this work is study of silicon single crystal wafer thermal stability in correlation with three-dimensional (3D) surfacecharacterization using atomic force microscopy (AFM). The samples were heated up to 500 °C for the period of 2 and 4 h. Then thesurfaces of wafers were processed by ion beam. The difference in surface structure of processed and reference samples wasinvestigated. Structural and compositional studies are provided by X-ray photoelectron spectroscopy. Stereometric analysis wascarried out on the basis of AFM-data, for stressed and unstressed samples. The results of stereometric analysis show the correlationof statistical characteristics of surface topography and structure of surface and near-surface area. Characterization techniques incombination with data processing methodology are essential for description of the surface condition. All the extracted topographicparameters and texture features have demonstrated a deeper analysis that can be used for new micro-topography models. (PDF) Stereometric Analysis of Effects of Heat Stressing on Micromorphology of Si Single Crystals.

Klíčová slova

Atomic force microscopy, Si single crystal wafers, Stereometric analysis, Topography, X-ray photoelectron spectroscopy

Klíčová slova v angličtině

Atomic force microscopy, Si single crystal wafers, Stereometric analysis, Topography, X-ray photoelectron spectroscopy

Autoři

DALLAEV, R.; STACH, S.; TALU, S.; SOBOLA, D.; MÉNDEZ-ALBORES, A.; TREJO, G.; GRMELA, L.

Rok RIV

2019

Vydáno

26.01.2019

Nakladatel

Springer

ISSN

1876-990X

Periodikum

Silicon

Svazek

11

Číslo

1

Stát

Nizozemsko

Strany od

1

Strany do

15

Strany počet

15

URL

https://link.springer.com/article/10.1007/s12633-019-0085-4

BibTex

@article{BUT155249,
  author="Rashid {Dallaev} and Sebastian {Stach} and Stefan {Talu} and Dinara {Sobola} and Alia {Méndez-Albores} and Gabriel {Trejo} and Lubomír {Grmela}",
  title="Stereometric Analysis of Effects of Heat Stressing on Micromorphology of Si Single Crystals",
  journal="Silicon",
  year="2019",
  volume="11",
  number="1",
  pages="1--15",
  doi="10.1007/s12633-019-0085-4",
  issn="1876-990X",
  url="https://link.springer.com/article/10.1007/s12633-019-0085-4"
}

Dokumenty

Article_StereometricAnalysisOfEffectsO