Detail publikačního výsledku

Modeling tunneling effects and complex dynamics in tantalum oxide memristive devices

BIOLKOVÁ, V.; KOLKA, Z.; BIOLEK, D.

Originální název

Modeling tunneling effects and complex dynamics in tantalum oxide memristive devices

Anglický název

Modeling tunneling effects and complex dynamics in tantalum oxide memristive devices

Druh

Stať ve sborníku mimo WoS a Scopus

Originální abstrakt

The proposed model combines the accuracy of Simmon’s port equation and simplicity of state equation of TEAM model. A compact approximating formula is found for the port equation which overcomes convergence problems associated with the original equation. The state equation is transformed to the form which enables analytical pre-processing of its solution. It speeds-up significantly the transient analysis. The resulting compact model of the TiO2 device was tested via large-scale benchmark circuits in HSPICE. The transient analyses were run without convergence problems for networks containing ca 10 millions of memristors.

Anglický abstrakt

The proposed model combines the accuracy of Simmon’s port equation and simplicity of state equation of TEAM model. A compact approximating formula is found for the port equation which overcomes convergence problems associated with the original equation. The state equation is transformed to the form which enables analytical pre-processing of its solution. It speeds-up significantly the transient analysis. The resulting compact model of the TiO2 device was tested via large-scale benchmark circuits in HSPICE. The transient analyses were run without convergence problems for networks containing ca 10 millions of memristors.

Klíčová slova

memristor; model; TiO2

Klíčová slova v angličtině

memristor; model; TiO2

Autoři

BIOLKOVÁ, V.; KOLKA, Z.; BIOLEK, D.

Rok RIV

2019

Vydáno

17.12.2018

Nakladatel

EMN

Místo

Auckland, New Zealand

Strany od

54

Strany do

55

Strany počet

2

BibTex

@inproceedings{BUT152019,
  author="Viera {Biolková} and Zdeněk {Kolka} and Dalibor {Biolek}",
  title="Modeling tunneling effects and complex dynamics in tantalum oxide memristive devices",
  year="2018",
  pages="54--55",
  publisher="EMN",
  address="Auckland, New Zealand"
}