Detail publikačního výsledku

Surface morphology after reactive ion etching of silicon and gallium arsenide based solar cells

PAPEŽ, N.; SOBOLA, D.; GAJDOŠ, A.; ŠKVARENINA, Ľ.; MACKŮ, R.; ELIÁŠ, M.; NEBOJSA, A.; MOTÚZ, R.

Originální název

Surface morphology after reactive ion etching of silicon and gallium arsenide based solar cells

Anglický název

Surface morphology after reactive ion etching of silicon and gallium arsenide based solar cells

Druh

Článek Scopus

Originální abstrakt

This work aims to study the surface morphology of solar cells before and after reactive ion etching (RIE) at two different pressures. Two types of solar cell based on GaAs and polycrystalline Si were processed and compared. The Scanning Electron Microscope (SEM) with the Energy Dispersive X-ray spectroscopy (EDX) was used for analysis of the samples. Raman spectroscopy showed a structural fingerprint of materials before and after processing. Atomic Force Microscope (AFM) demonstrated dimensional topography with high resolution. Optical spectrometer detected changing of reflectance the samples. Experimentally, it has been confirmed that GaAs solar cells have a very high endurance to ion bombardment in comparison to Si cells.

Anglický abstrakt

This work aims to study the surface morphology of solar cells before and after reactive ion etching (RIE) at two different pressures. Two types of solar cell based on GaAs and polycrystalline Si were processed and compared. The Scanning Electron Microscope (SEM) with the Energy Dispersive X-ray spectroscopy (EDX) was used for analysis of the samples. Raman spectroscopy showed a structural fingerprint of materials before and after processing. Atomic Force Microscope (AFM) demonstrated dimensional topography with high resolution. Optical spectrometer detected changing of reflectance the samples. Experimentally, it has been confirmed that GaAs solar cells have a very high endurance to ion bombardment in comparison to Si cells.

Klíčová slova

gallium arsenide, ion etching, rie, silicon, afm

Klíčová slova v angličtině

gallium arsenide, ion etching, rie, silicon, afm

Autoři

PAPEŽ, N.; SOBOLA, D.; GAJDOŠ, A.; ŠKVARENINA, Ľ.; MACKŮ, R.; ELIÁŠ, M.; NEBOJSA, A.; MOTÚZ, R.

Rok RIV

2019

Vydáno

01.12.2018

Nakladatel

IOP Publishing Ltd

Kniha

Journal of Physics: Conference Series

ISSN

1742-6596

Periodikum

Journal of Physics: Conference Series

Svazek

1124

Číslo

4

Stát

Spojené království Velké Británie a Severního Irska

Strany od

165

Strany do

171

Strany počet

6

URL

http://iopscience.iop.org/article/10.1088/1742-6596/1124/4/041015

BibTex

@article{BUT151859,
  author="Nikola {Papež} and Dinara {Sobola} and Adam {Gajdoš} and Ľubomír {Škvarenina} and Robert {Macků} and Marek {Eliáš} and Alois {Nebojsa} and Rastislav {Motúz}",
  title="Surface morphology after reactive ion etching of silicon and gallium arsenide based solar cells",
  journal="Journal of Physics: Conference Series",
  year="2018",
  volume="1124",
  number="4",
  pages="165--171",
  doi="10.1088/1742-6596/1124/4/041015",
  issn="1742-6596",
  url="http://iopscience.iop.org/article/10.1088/1742-6596/1124/4/041015"
}