Detail publikačního výsledku

Local isolation of microscale defective areas in monocrysline silicon solar cells

GAJDOŠ, A.

Originální název

Local isolation of microscale defective areas in monocrysline silicon solar cells

Anglický název

Local isolation of microscale defective areas in monocrysline silicon solar cells

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

This article is aimed on characterization of silicon solar cells microstructural inhomoge- neities. To detect inhomogeneity or imperfection, reverse biased current voltage (I-V) measurement is used. These imperfections in some cases may cause avalanche type of breakdown, that can be visible in I-V curve. Therefore, the fact that certain imperfections emit light is used for localization needs. Raw localization is provided by electroluminescence (EL) method. Near-field scanning microscopy (SNOM) combined with photomultiplier tube is used for microscale localization. Both methods are done in reverse bias. Isolation of inhomogeneity by focused ion beam (FIB) is avoid- ing leakage current flow through it.

Anglický abstrakt

This article is aimed on characterization of silicon solar cells microstructural inhomoge- neities. To detect inhomogeneity or imperfection, reverse biased current voltage (I-V) measurement is used. These imperfections in some cases may cause avalanche type of breakdown, that can be visible in I-V curve. Therefore, the fact that certain imperfections emit light is used for localization needs. Raw localization is provided by electroluminescence (EL) method. Near-field scanning microscopy (SNOM) combined with photomultiplier tube is used for microscale localization. Both methods are done in reverse bias. Isolation of inhomogeneity by focused ion beam (FIB) is avoid- ing leakage current flow through it.

Klíčová slova

Solar cell, FIB, SEM, SNOM, silicon, electroluminescence

Klíčová slova v angličtině

Solar cell, FIB, SEM, SNOM, silicon, electroluminescence

Autoři

GAJDOŠ, A.

Rok RIV

2019

Vydáno

26.04.2018

Nakladatel

Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních

Místo

Brno

ISBN

978-80-214-5614-3

Kniha

Proceedings of the 24 th Conference STUDENT EEICT 2018

Strany od

518

Strany do

522

Strany počet

615

BibTex

@inproceedings{BUT147335,
  author="Adam {Gajdoš}",
  title="Local isolation of microscale defective areas in monocrysline silicon solar cells",
  booktitle="Proceedings of the 24 th Conference STUDENT EEICT 2018",
  year="2018",
  pages="518--522",
  publisher="Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních",
  address="Brno",
  isbn="978-80-214-5614-3"
}