Detail publikačního výsledku

RTS noise in submicron MOSFET

Martin Blaha

Originální název

RTS noise in submicron MOSFET

Anglický název

RTS noise in submicron MOSFET

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

In the present paper, Im show processing of RTS noise in submicron MOSFET. The measure data from MOSFET tranzistor we process in program Easy Plot. From shape of curve we obtain time t1, t2 and t0. From measure date make programm Easy Plot histogram, RTS noise spectra density and FFT. This measure and elaborated data help us with be under way near physical process in MOSFET tranzistor.

Anglický abstrakt

In the present paper, Im show processing of RTS noise in submicron MOSFET. The measure data from MOSFET tranzistor we process in program Easy Plot. From shape of curve we obtain time t1, t2 and t0. From measure date make programm Easy Plot histogram, RTS noise spectra density and FFT. This measure and elaborated data help us with be under way near physical process in MOSFET tranzistor.

Klíčová slova

RTS, MOSFET, FFT, noise spectra density

Klíčová slova v angličtině

RTS, MOSFET, FFT, noise spectra density

Autoři

Martin Blaha

Vydáno

12.11.2004

Místo

Brno

ISBN

80-7355024-5

Kniha

New trends in physics

Strany od

12

Strany počet

4

BibTex

@inproceedings{BUT14555,
  author="Martin {Bláha}",
  title="RTS noise in submicron MOSFET",
  booktitle="New trends in physics",
  year="2004",
  pages="4",
  address="Brno",
  isbn="80-7355024-5"
}