Detail publikačního výsledku

Electronic transport properties of graphene doped by gallium

MACH, J.; PROCHÁZKA, P.; BARTOŠÍK, M.; NEZVAL, D.; PIASTEK, J.; HULVA, J.; ŠVARC, V.; KONEČNÝ, M.; KORMOŠ, L.; ŠIKOLA, T.

Originální název

Electronic transport properties of graphene doped by gallium

Anglický název

Electronic transport properties of graphene doped by gallium

Druh

Článek WoS

Originální abstrakt

In this work we present the effect of low dose gallium (Ga) deposition (<4ML) performed in UHV (10−7 Pa) on the electronic doping and charge carrier scattering in graphene grown by chemical vapor deposition. In situ graphene transport measurements performed with a graphene field-effect transistor structure show that at low Ga coverages a graphene layer tends to be strongly n-doped with an efficiency of 0.64 electrons per one Ga atom, while the further deposition and Ga cluster formation results in removing electrons from graphene (less n-doping). The experimental results are supported by the density functional theory calculations and explained as a consequence of distinct interaction between graphene and Ga atoms in case of individual atoms, layers, or clusters.

Anglický abstrakt

In this work we present the effect of low dose gallium (Ga) deposition (<4ML) performed in UHV (10−7 Pa) on the electronic doping and charge carrier scattering in graphene grown by chemical vapor deposition. In situ graphene transport measurements performed with a graphene field-effect transistor structure show that at low Ga coverages a graphene layer tends to be strongly n-doped with an efficiency of 0.64 electrons per one Ga atom, while the further deposition and Ga cluster formation results in removing electrons from graphene (less n-doping). The experimental results are supported by the density functional theory calculations and explained as a consequence of distinct interaction between graphene and Ga atoms in case of individual atoms, layers, or clusters.

Klíčová slova

graphene, gallium, CVD, DFT, transport, doping

Klíčová slova v angličtině

graphene, gallium, CVD, DFT, transport, doping

Autoři

MACH, J.; PROCHÁZKA, P.; BARTOŠÍK, M.; NEZVAL, D.; PIASTEK, J.; HULVA, J.; ŠVARC, V.; KONEČNÝ, M.; KORMOŠ, L.; ŠIKOLA, T.

Rok RIV

2018

Vydáno

13.10.2017

ISSN

0957-4484

Periodikum

NANOTECHNOLOGY

Svazek

28

Číslo

41

Stát

Spojené království Velké Británie a Severního Irska

Strany od

1

Strany do

10

Strany počet

10

URL

https://pubmed.ncbi.nlm.nih.gov/28813368/

BibTex

@article{BUT139482,
  author="Jindřich {Mach} and Pavel {Procházka} and Miroslav {Bartošík} and David {Nezval} and Jakub {Piastek} and Jan {Hulva} and Vojtěch {Švarc} and Martin {Konečný} and Lukáš {Kormoš} and Tomáš {Šikola}",
  title="Electronic transport properties of graphene doped by gallium",
  journal="NANOTECHNOLOGY",
  year="2017",
  volume="28",
  number="41",
  pages="1--10",
  doi="10.1088/1361-6528/aa86a4",
  issn="0957-4484",
  url="https://pubmed.ncbi.nlm.nih.gov/28813368/"
}