Detail publikačního výsledku

Test Stand for Obtaining Power Transistors Switching Characteristics During Aging

KNOBLOCH, J.; MARTIŠ, J.; CIPÍN, R.; NOUMAN, Z.

Originální název

Test Stand for Obtaining Power Transistors Switching Characteristics During Aging

Anglický název

Test Stand for Obtaining Power Transistors Switching Characteristics During Aging

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

This paper aims to construction, control and implemented measurement method of laboratory stand in order to acquire insulated gate bipolar transistor transients. The transients waveforms are consequently used to obtain indicators of the transistor age. The lifetime tests of an insulated gate bipolar transistor are introduced. Consequently, a novel architecture of measuring stand in order to provide lifetime tests is designed. Also the control algorithm is presented. A fundamental part of this work is a method of measuring switching waveforms including a high frequency current. Acquired waveforms of transistor switching are presented. Finally, the trend of chosen aging indicator values was obtained from the acquired data. Namely the influence of aging on turn--off time was observed.

Anglický abstrakt

This paper aims to construction, control and implemented measurement method of laboratory stand in order to acquire insulated gate bipolar transistor transients. The transients waveforms are consequently used to obtain indicators of the transistor age. The lifetime tests of an insulated gate bipolar transistor are introduced. Consequently, a novel architecture of measuring stand in order to provide lifetime tests is designed. Also the control algorithm is presented. A fundamental part of this work is a method of measuring switching waveforms including a high frequency current. Acquired waveforms of transistor switching are presented. Finally, the trend of chosen aging indicator values was obtained from the acquired data. Namely the influence of aging on turn--off time was observed.

Klíčová slova

aging; IGBT; collector current measurement; failure indicator; switching characteristic.

Klíčová slova v angličtině

aging; IGBT; collector current measurement; failure indicator; switching characteristic.

Autoři

KNOBLOCH, J.; MARTIŠ, J.; CIPÍN, R.; NOUMAN, Z.

Rok RIV

2018

Vydáno

07.06.2017

Místo

Milán, Italská republika

ISBN

978-1-5386-3916-0

Kniha

Conference Proceedings 2017 IEEE International Conference on Environment and Electrical Engineering and 2017 IEEE Industrial and Commercial Power Systems Europe

Strany od

393

Strany do

397

Strany počet

5

URL

https://ieeexplore.ieee.org/document/7977460

Plný text v Digitální knihovně

http://hdl.handle.net/

BibTex

@inproceedings{BUT137073,
  author="Jan {Knobloch} and Jan {Martiš} and Radoslav {Cipín} and Ziad {Nouman}",
  title="Test Stand for Obtaining Power Transistors Switching Characteristics During Aging",
  booktitle="Conference Proceedings 2017 IEEE International Conference on Environment and Electrical Engineering and 2017 IEEE Industrial and Commercial Power Systems Europe",
  year="2017",
  number="1",
  pages="393--397",
  address="Milán, Italská republika",
  doi="10.1109/EEEIC.2017.7977460",
  isbn="978-1-5386-3916-0",
  url="https://ieeexplore.ieee.org/document/7977460"
}