Detail publikačního výsledku

PRESENT STATE OF GAN TECHNOLOGY IN POWER ELECTRONICS

ŠÍR, M.

Originální název

PRESENT STATE OF GAN TECHNOLOGY IN POWER ELECTRONICS

Anglický název

PRESENT STATE OF GAN TECHNOLOGY IN POWER ELECTRONICS

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

Paper presents a general overview of nowadays Gallium Nitride power transistor technology and shows the existing components with their limits from different manufacturers currently available on the market. Introduction to GaN depletion mode, enhancement mode and cascode transistor structure with their function explanation is included.

Anglický abstrakt

Paper presents a general overview of nowadays Gallium Nitride power transistor technology and shows the existing components with their limits from different manufacturers currently available on the market. Introduction to GaN depletion mode, enhancement mode and cascode transistor structure with their function explanation is included.

Klíčová slova

GaN, cascode, depletion mode, enhancement mode

Klíčová slova v angličtině

GaN, cascode, depletion mode, enhancement mode

Autoři

ŠÍR, M.

Rok RIV

2018

Vydáno

27.04.2017

Nakladatel

Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních

Místo

Brno

ISBN

978-80-214-5496-5

Kniha

Proceedings of the 23nd Conference STUDENT EEICT 2017

Strany od

563

Strany do

567

Strany počet

5

URL

http://eeict.feec.vutbr.cz/

BibTex

@inproceedings{BUT136463,
  author="Michal {Šír}",
  title="PRESENT STATE OF GAN TECHNOLOGY IN POWER ELECTRONICS",
  booktitle="Proceedings of the 23nd Conference STUDENT EEICT 2017",
  year="2017",
  number="první",
  pages="563--567",
  publisher="Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních",
  address="Brno",
  isbn="978-80-214-5496-5",
  url="http://eeict.feec.vutbr.cz/"
}