Detail publikačního výsledku

Diode Model Parameters Extraction

RECMAN, M.

Originální název

Diode Model Parameters Extraction

Anglický název

Diode Model Parameters Extraction

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

The contribution examines use of ISE-TCAD device simulation tools and the Star-HSPICE optimization tools to extract diode model parameters. The individual steps included in DESSIS diode simulation, INSPECT I-V electrical characteristics selection, HSPICE input data formatting, model parameters optimization and model evaluation are analysed and described. The extraction methodology using DESSIS simulated data as real (measured) electrical characteristics and HSPICE optimization procedures is proposed and applied to find the parameter values of the HSPICE diode model.

Anglický abstrakt

The contribution examines use of ISE-TCAD device simulation tools and the Star-HSPICE optimization tools to extract diode model parameters. The individual steps included in DESSIS diode simulation, INSPECT I-V electrical characteristics selection, HSPICE input data formatting, model parameters optimization and model evaluation are analysed and described. The extraction methodology using DESSIS simulated data as real (measured) electrical characteristics and HSPICE optimization procedures is proposed and applied to find the parameter values of the HSPICE diode model.

Klíčová slova

device simulation, circuit simulation, model parameters extraction

Klíčová slova v angličtině

device simulation, circuit simulation, model parameters extraction

Autoři

RECMAN, M.

Vydáno

01.01.2004

ISBN

80-214-2819-8

Kniha

Socrates Workshop 2004. Intensive Training Programme in Electronic

Strany od

55

Strany počet

6

BibTex

@inproceedings{BUT13139,
  author="Milan {Recman}",
  title="Diode Model Parameters Extraction",
  booktitle="Socrates Workshop 2004. Intensive Training Programme in Electronic",
  year="2004",
  pages="6",
  isbn="80-214-2819-8"
}