Detail publikačního výsledku

In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs

HOFMAN, J.; HÁZE, J.; SHARP, R.; JAKSIC, A.; VASOVIC, N.

Originální název

In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs

Anglický název

In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

This work presents results of a total ionising dose experiment, during which p-channel RADFETs were irradiated and measured under different gate bias conditions using an in-situ technique. The measurement system allowed threshold voltage shifts and temperature sensitivity of the shift to be measured during irradiation to 60 krad(Si) and the subsequent 55 day period of annealing.

Anglický abstrakt

This work presents results of a total ionising dose experiment, during which p-channel RADFETs were irradiated and measured under different gate bias conditions using an in-situ technique. The measurement system allowed threshold voltage shifts and temperature sensitivity of the shift to be measured during irradiation to 60 krad(Si) and the subsequent 55 day period of annealing.

Klíčová slova

RADFET, PMOS dosimeter, temperature effects, temperature coefficient, MTC, ZTC, automated test equipment, test methods

Klíčová slova v angličtině

RADFET, PMOS dosimeter, temperature effects, temperature coefficient, MTC, ZTC, automated test equipment, test methods

Autoři

HOFMAN, J.; HÁZE, J.; SHARP, R.; JAKSIC, A.; VASOVIC, N.

Rok RIV

2017

Vydáno

11.07.2016

Nakladatel

IEEE

Místo

Portland, US

ISBN

978-1-4673-2730-5

Kniha

Radiation Effects Data Workshop (REDW), 2016 IEEE

Strany od

1

Strany do

4

Strany počet

4

BibTex

@inproceedings{BUT127872,
  author="Jiří {Hofman} and Jiří {Háze} and Richard {Sharp} and Aleksandar {Jaksic} and Nikola {Vasovic}",
  title="In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs",
  booktitle="Radiation Effects Data Workshop (REDW), 2016 IEEE",
  year="2016",
  pages="1--4",
  publisher="IEEE",
  address="Portland, US",
  isbn="978-1-4673-2730-5"
}