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Detail publikačního výsledku
KUMNGERN, M.; KHATEB, F.
Originální název
Fully Differential Difference Transconductance Amplifier Using FG-MOS Transistors
Anglický název
Druh
Stať ve sborníku v databázi WoS či Scopus
Originální abstrakt
This paper presents a fully differential difference transconductance amplifier for applications to low-voltage and low-power analogue circuits. Differential difference input voltage can be obtained using floating-gate MOS transistor technique and it can be taken also the possibility of low supply voltage of the circuit. The proposed active building block has been simulated using TSMC 0.18 μm n-well CMOS technology. The circuit uses 0.4 V supply voltage and consumes a 27 μW of static power. A fully differential universal filter using proposed circuit as active device was presented as an example application.
Anglický abstrakt
Klíčová slova
Floating-gate technique, fully differential difference transconductance amplifier, low-voltage and low-power circuit
Klíčová slova v angličtině
Autoři
Rok RIV
2017
Vydáno
12.11.2015
Nakladatel
Institute of Electrical and Electronics Engineers Inc.
Místo
Nusa Dua
ISBN
978-1-4673-6499-7
Kniha
2015 International Symposium on Intelligent Signal Processing and Communication Systems, ISPACS 2015
Strany od
337
Strany do
341
Strany počet
5
URL
http://dx.doi.org/10.1109/ISPACS.2015.7432792
BibTex
@inproceedings{BUT125090, author="Montree {Kumngern} and Fabian {Khateb}", title="Fully Differential Difference Transconductance Amplifier Using FG-MOS Transistors", booktitle="2015 International Symposium on Intelligent Signal Processing and Communication Systems, ISPACS 2015", year="2015", pages="337--341", publisher="Institute of Electrical and Electronics Engineers Inc.", address="Nusa Dua", doi="10.1109/ISPACS.2015.7432792", isbn="978-1-4673-6499-7", url="http://dx.doi.org/10.1109/ISPACS.2015.7432792" }