Type-II InAs/GaAsSb/GaAs Quantum Dots as Artificial Quantum Dot Molecules

Type-II InAs/GaAsSb/GaAs Quantum Dots as Artificial Quantum Dot Molecules

Článek WoS

We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found that the hole states are segmented and resemble the states in the quantum dot molecules. The two-hole states form singlet and triplet with the splitting energy of 4 µeV/325 µeV for the case (i)/(ii). We have also tested the possibility to tune the splitting by vertically applied magnetic field. Because the predicted tunability range was limited, we propose an approach for its enhancement

We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found that the hole states are segmented and resemble the states in the quantum dot molecules. The two-hole states form singlet and triplet with the splitting energy of 4 µeV/325 µeV for the case (i)/(ii). We have also tested the possibility to tune the splitting by vertically applied magnetic field. Because the predicted tunability range was limited, we propose an approach for its enhancement

Quantum dots; Type II, GaAsSb

Quantum dots; Type II, GaAsSb

KLENOVSKÝ, P.; KŘÁPEK, V.; HUMLÍČEK, J.

2017

15.01.2016

0587-4246

ACTA PHYSICA POLONICA A

129

1A

Polská republika

A62

A65

4