Detail publikace

Low-Frequency Noise Diagnostic of Silicon Concentrator Photovoltaic Cell With Very High Efficiency

VANĚK, J. CHOBOLA, Z. LUŇÁK, M.

Originální název

Low-Frequency Noise Diagnostic of Silicon Concentrator Photovoltaic Cell With Very High Efficiency

Anglický název

Low-Frequency Noise Diagnostic of Silicon Concentrator Photovoltaic Cell With Very High Efficiency

Jazyk

en

Originální abstrakt

This paper deals with comparisons of noise spectroscopy, I-V characteristic and microplasma detection of silicon concentrator photovoltaic (CPV) cell with very high efficiency. Efficiency reaches to 38%. We studied two groups with different technologies (A and B). Each group had 6 samples. The samples were quality screened using noise analysis. From the measurement results it follows that the noise spectral density related to defects is of 1/f or generation-recombination types. G-R noise and burst noise is not fundamental noise and therefore can by use as a quality indicator.

Anglický abstrakt

This paper deals with comparisons of noise spectroscopy, I-V characteristic and microplasma detection of silicon concentrator photovoltaic (CPV) cell with very high efficiency. Efficiency reaches to 38%. We studied two groups with different technologies (A and B). Each group had 6 samples. The samples were quality screened using noise analysis. From the measurement results it follows that the noise spectral density related to defects is of 1/f or generation-recombination types. G-R noise and burst noise is not fundamental noise and therefore can by use as a quality indicator.

Dokumenty

BibTex 


@inproceedings{BUT120033,
  author="Jiří {Vaněk} and Zdeněk {Chobola} and Miroslav {Luňák}",
  title="Low-Frequency Noise Diagnostic of Silicon Concentrator Photovoltaic Cell With
Very High Efficiency",
  annote="This paper deals with comparisons of noise spectroscopy, I-V characteristic and microplasma detection of silicon concentrator photovoltaic (CPV) cell with very high efficiency. Efficiency reaches to 38%. We studied two groups with different technologies (A and B). Each group had 6 samples. The samples were quality screened using noise analysis. From the measurement results it follows that the noise spectral density related to defects is of 1/f or generation-recombination types. G-R noise and burst noise is not fundamental noise and therefore can by use as a quality indicator.",
  address="ECS Transaction",
  booktitle="ECS Trans. 2015 70(1)",
  chapter="120033",
  doi="10.1149/07001.0245ecst",
  howpublished="electronic, physical medium",
  institution="ECS Transaction",
  number="1",
  year="2015",
  month="december",
  pages="245--253",
  publisher="ECS Transaction",
  type="conference paper"
}