Detail publikace

Low-Frequency Noise Diagnostic of Silicon Concentrator Photovoltaic Cell With Very High Efficiency

VANĚK, J. CHOBOLA, Z. LUŇÁK, M.

Originální název

Low-Frequency Noise Diagnostic of Silicon Concentrator Photovoltaic Cell With Very High Efficiency

Anglický název

Low-Frequency Noise Diagnostic of Silicon Concentrator Photovoltaic Cell With Very High Efficiency

Jazyk

en

Originální abstrakt

This paper deals with comparisons of noise spectroscopy, I-V characteristic and microplasma detection of silicon concentrator photovoltaic (CPV) cell with very high efficiency. Efficiency reaches to 38%. We studied two groups with different technologies (A and B). Each group had 6 samples. The samples were quality screened using noise analysis. From the measurement results it follows that the noise spectral density related to defects is of 1/f or generation-recombination types. G-R noise and burst noise is not fundamental noise and therefore can by use as a quality indicator.

Anglický abstrakt

This paper deals with comparisons of noise spectroscopy, I-V characteristic and microplasma detection of silicon concentrator photovoltaic (CPV) cell with very high efficiency. Efficiency reaches to 38%. We studied two groups with different technologies (A and B). Each group had 6 samples. The samples were quality screened using noise analysis. From the measurement results it follows that the noise spectral density related to defects is of 1/f or generation-recombination types. G-R noise and burst noise is not fundamental noise and therefore can by use as a quality indicator.

Dokumenty

BibTex 


@inproceedings{BUT117606,
  author="Jiří {Vaněk} and Zdeněk {Chobola} and Miroslav {Luňák}",
  title="Low-Frequency Noise Diagnostic of Silicon Concentrator Photovoltaic Cell With
Very High Efficiency",
  annote="This paper deals with comparisons of noise spectroscopy, I-V characteristic and microplasma detection of silicon concentrator photovoltaic (CPV) cell with very high efficiency. Efficiency reaches to 38%. We studied two groups with different technologies (A and B). Each group had 6 samples. The samples were quality screened using noise analysis. From the measurement results it follows that the noise spectral density related to defects is of 1/f or generation-recombination types. G-R noise and burst noise is not fundamental noise and therefore can by use as a quality indicator.",
  address="Brno University of Technology",
  booktitle="16th ABAF International Conference proceeding",
  chapter="117606",
  edition="1",
  howpublished="electronic, physical medium",
  institution="Brno University of Technology",
  year="2015",
  month="august",
  pages="144--146",
  publisher="Brno University of Technology",
  type="conference paper"
}