Detail publikačního výsledku

Improved Model of TiO2 Memristor

KOLKA, Z.; BIOLEK, D.; BIOLKOVÁ, V.

Originální název

Improved Model of TiO2 Memristor

Anglický název

Improved Model of TiO2 Memristor

Druh

Článek WoS

Originální abstrakt

Analysis of Pickett model of the HP TiO2 memristor presented in this paper reveals an ambiguity of its Port Equation, which may cause non-convergence, numerical errors, and non-physical solutions during time-domain simulation. As there is no easy fix of the original model a new behavioral approximation of static I-V characteristics has been proposed. The approximation matches well the original model and is unambiguous.

Anglický abstrakt

Analysis of Pickett model of the HP TiO2 memristor presented in this paper reveals an ambiguity of its Port Equation, which may cause non-convergence, numerical errors, and non-physical solutions during time-domain simulation. As there is no easy fix of the original model a new behavioral approximation of static I-V characteristics has been proposed. The approximation matches well the original model and is unambiguous.

Klíčová slova

TiO2 memristor, Port Equation, State Equation, Pickett model, simulation

Klíčová slova v angličtině

TiO2 memristor, Port Equation, State Equation, Pickett model, simulation

Autoři

KOLKA, Z.; BIOLEK, D.; BIOLKOVÁ, V.

Rok RIV

2016

Vydáno

01.06.2015

Nakladatel

Společnost pro radiotechnické inženýrství

Místo

Brno

ISSN

1210-2512

Periodikum

Radioengineering

Svazek

24

Číslo

2

Stát

Česká republika

Strany od

378

Strany do

383

Strany počet

6

BibTex

@article{BUT115011,
  author="Zdeněk {Kolka} and Dalibor {Biolek} and Viera {Biolková}",
  title="Improved Model of TiO2 Memristor",
  journal="Radioengineering",
  year="2015",
  volume="24",
  number="2",
  pages="378--383",
  doi="10.13164/re.2015.0378",
  issn="1210-2512"
}