Detail publikace

Modeling C-AFM measurement using FEM

MARTINEK, J. ŠLESINGER, R. KLAPETEK, P.

Originální název

Modeling C-AFM measurement using FEM

Anglický název

Modeling C-AFM measurement using FEM

Jazyk

en

Originální abstrakt

The presented work describes a finite element method based modeling of a conductive AFM measurement process. The C-AFM is a scanning probe microscopy technique for mapping electrical properties of a sample together with its topography. The contact resistance between the probe and the rough surface is modeled in two steps - first the problem of mechanical deformation is solved and then the electrical field, and current, is found. The geometry of the model comes from a real sample topography measured using AFM. The whole multiphysics 3D simulation is done for each data point, which makes the problem possible to be solved only using a supercomputer with many simplifications and optimizations.

Anglický abstrakt

The presented work describes a finite element method based modeling of a conductive AFM measurement process. The C-AFM is a scanning probe microscopy technique for mapping electrical properties of a sample together with its topography. The contact resistance between the probe and the rough surface is modeled in two steps - first the problem of mechanical deformation is solved and then the electrical field, and current, is found. The geometry of the model comes from a real sample topography measured using AFM. The whole multiphysics 3D simulation is done for each data point, which makes the problem possible to be solved only using a supercomputer with many simplifications and optimizations.

Dokumenty

BibTex 


@inproceedings{BUT112043,
  author="Jan {Martinek} and Radek {Šlesinger} and Petr {Klapetek}",
  title="Modeling C-AFM measurement using FEM",
  annote="The presented work describes a finite element method based modeling of a conductive AFM measurement process. The C-AFM is a scanning probe microscopy technique for mapping electrical properties of a sample together with its topography. The contact resistance between the probe and the rough surface is modeled in two steps - first the problem of mechanical deformation is solved and then the electrical field, and current, is found. The geometry of the model comes from a real sample topography measured using AFM. The whole multiphysics 3D simulation is done for each data point, which makes the problem possible to be solved only using a supercomputer with many simplifications and optimizations.",
  booktitle="Nanocon 2014",
  chapter="112043",
  howpublished="electronic, physical medium",
  year="2014",
  month="november",
  pages="1--6",
  type="conference paper"
}