Realization of microscale detection and localization of low light emitting spots in monocrystalline silicon solar cells

Realization of microscale detection and localization of low light emitting spots in monocrystalline silicon solar cells

Článek WoS

We report on detection and localization of imperfections in silicon solar cell bulk and surface with sub-micrometer resolution. To obtain this resolution, a family of imaging techniques including SNOM, SEM and AFM is often separately used for this purpose. In this paper we combine several of these proximal methods together, because each of them brings complimentary information about the imperfection. First, we note that SNOM images often contain distortions due to the interaction of the probe tip and sample. Therefore, we look for the possibility to circumvent this weakness and obtain more realistic images. In our experiments, we take advantage of the fact that defects or imperfections in silicon solar cell structures under reverse-bias voltage exhibit microscale low light emitting spots, and we apply an improved SNOM measurement to localize these spots. As a result, this system allows a localization and measurement of low light emission on microscale. Consequently, the size and shape of imperfections can also be determined.

We report on detection and localization of imperfections in silicon solar cell bulk and surface with sub-micrometer resolution. To obtain this resolution, a family of imaging techniques including SNOM, SEM and AFM is often separately used for this purpose. In this paper we combine several of these proximal methods together, because each of them brings complimentary information about the imperfection. First, we note that SNOM images often contain distortions due to the interaction of the probe tip and sample. Therefore, we look for the possibility to circumvent this weakness and obtain more realistic images. In our experiments, we take advantage of the fact that defects or imperfections in silicon solar cell structures under reverse-bias voltage exhibit microscale low light emitting spots, and we apply an improved SNOM measurement to localize these spots. As a result, this system allows a localization and measurement of low light emission on microscale. Consequently, the size and shape of imperfections can also be determined.

solar cell, silicon, monocrystalline emitting spot, detection, localization, microscale

solar cell, silicon, monocrystalline emitting spot, detection, localization, microscale

DALLAEVA, D.; TOMÁNEK, P.; ŠKARVADA, P.; GRMELA, L.

2016

06.01.2015

SPIE

Bellingham, USA

0277-786X

Proceedings of SPIE

9450

9450

Spojené státy americké

94501O-1

94501O-7

7