Detail publikačního výsledku

A variety of microstructural defects in crystalline silicon solar cells

ŠKARVADA, P.; TOMÁNEK, P.; KOKTAVÝ, P.; MACKŮ, R.; ŠICNER, J.; VONDRA, M.; DALLAEVA, D.; SMITH, S.; GRMELA, L.

Originální název

A variety of microstructural defects in crystalline silicon solar cells

Anglický název

A variety of microstructural defects in crystalline silicon solar cells

Druh

Článek WoS

Originální abstrakt

The performance and lifetime of solar cells critically depends on bulk and surface defects. To improve performance of solar cells, localization and characterization of defects on the microscale is an important issue. This paper describes a variety of microstructural defects in crystalline silicon solar cells which appear during the cell processing steps. The set of defects have been investigated and localized using visible light emission under reversed bias voltage. A light beam induced photocurrent method allows localization of defects having impact on the sample current-voltage plot and reversed bias light emission characteristics. These are shown together with the micrographs of defective surface areas. As a result, particular defects which induce nonlinearity and local breakdown in the current-voltage plot were identified in tested solar cell structures. Furthermore, measurements at various temperatures allows to identify the breakdown mechanism of the investigated defects. An interesting result of the investigation is that the majority of defects are associated with surface inhomogeneities, but not all surface inhomogeneities act as defects.

Anglický abstrakt

The performance and lifetime of solar cells critically depends on bulk and surface defects. To improve performance of solar cells, localization and characterization of defects on the microscale is an important issue. This paper describes a variety of microstructural defects in crystalline silicon solar cells which appear during the cell processing steps. The set of defects have been investigated and localized using visible light emission under reversed bias voltage. A light beam induced photocurrent method allows localization of defects having impact on the sample current-voltage plot and reversed bias light emission characteristics. These are shown together with the micrographs of defective surface areas. As a result, particular defects which induce nonlinearity and local breakdown in the current-voltage plot were identified in tested solar cell structures. Furthermore, measurements at various temperatures allows to identify the breakdown mechanism of the investigated defects. An interesting result of the investigation is that the majority of defects are associated with surface inhomogeneities, but not all surface inhomogeneities act as defects.

Klíčová slova

Solar cell, silicon, microstructure defect, light emission, reverse bias, measurement

Klíčová slova v angličtině

Solar cell, silicon, microstructure defect, light emission, reverse bias, measurement

Autoři

ŠKARVADA, P.; TOMÁNEK, P.; KOKTAVÝ, P.; MACKŮ, R.; ŠICNER, J.; VONDRA, M.; DALLAEVA, D.; SMITH, S.; GRMELA, L.

Rok RIV

2015

Vydáno

01.09.2014

Nakladatel

Elsevier

ISSN

0169-4332

Periodikum

APPLIED SURFACE SCIENCE

Svazek

312

Číslo

312

Stát

Nizozemsko

Strany od

50

Strany do

56

Strany počet

7

URL

http://www.elsevier.org

Plný text v Digitální knihovně

http://hdl.handle.net/

BibTex

@article{BUT107704,
  author="Pavel {Škarvada} and Pavel {Tománek} and Pavel {Koktavý} and Robert {Macků} and Jiří {Šicner} and Marek {Vondra} and Dinara {Sobola} and Steve J. {Smith} and Lubomír {Grmela}",
  title="A variety of microstructural defects in crystalline silicon solar cells",
  journal="APPLIED SURFACE SCIENCE",
  year="2014",
  volume="312",
  number="312",
  pages="50--56",
  doi="10.1016/j.apsusc.2014.05.064",
  issn="0169-4332",
  url="http://www.elsevier.org"
}