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ŠKARVADA, P.; TOMÁNEK, P.; ŠICNER, J.
Originální název
Influence of localized structural defects on the pn junction properties
Anglický název
Druh
Článek WoS
Originální abstrakt
Local defects, as micro-fractures, precipitates and other material inhomogeneities in solar cell structure, evidently modify electrical and photoelectrical behavior of the latter. To improve the efficiency and lifetime of existing solar cells, it is important to localize these defects which influence the p-n properties, and assign them corresponding electrical characteristics. Although the electric breakdown can be evident in current-voltage plot, the localization of local defects in the sample, that generate this breakdown, is not so easy task. It has to be done by microscopic investigations and measurement of light emission from defects under electrical bias conditions. Thus to contribute to this end, the structure of defects is microscopically investigated and consequently, the defects can be removed by focused ion beam milling. The experimental results obtained from samples before and after milling are also discussed.
Anglický abstrakt
Klíčová slova
Solar cell, defect, silicon, ion beam milling
Klíčová slova v angličtině
Autoři
Rok RIV
2017
Vydáno
01.01.2014
Nakladatel
Trans tech publication
Místo
Switzerland
ISSN
1013-9826
Periodikum
Key Engineering Materials (print)
Svazek
592-593
Číslo
1
Stát
Švýcarská konfederace
Strany od
441
Strany do
444
Strany počet
4
BibTex
@article{BUT104974, author="Pavel {Škarvada} and Pavel {Tománek} and Jiří {Šicner}", title="Influence of localized structural defects on the pn junction properties", journal="Key Engineering Materials (print)", year="2014", volume="592-593", number="1", pages="441--444", doi="10.4028/www.scientific.net/KEM.592-593.441", issn="1013-9826" }