Detail publikačního výsledku

Progression of Silicon Solar Cells Luminescence Diagnostic Methods

STOJAN, R.; VANĚK, J.; MALÝ, M.

Originální název

Progression of Silicon Solar Cells Luminescence Diagnostic Methods

Anglický název

Progression of Silicon Solar Cells Luminescence Diagnostic Methods

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

Diagnostic of silicon solar cells defects is permanently one of most important steps in production of solar cells. Specify of diagnostic methods leads to a better understanding and more detailed analysis of manufactured cells. Luminescence methods of solar cells are fast and some of the most common methods today. According to the excitation method of luminescence radiation from silicon solar cells we talk about electroluminescence or photoluminescence methods. Spectral response of using CCD camera with those methods is in band-gap infrared wave length area. The main idea of this paper is to analyze emitted infrared radiation silicon solar cell under the forward bias by polarization spectroscopy. This analysis opens up for potential next new questions in diagnostics defects silicon solar cells by luminescence methods.

Anglický abstrakt

Diagnostic of silicon solar cells defects is permanently one of most important steps in production of solar cells. Specify of diagnostic methods leads to a better understanding and more detailed analysis of manufactured cells. Luminescence methods of solar cells are fast and some of the most common methods today. According to the excitation method of luminescence radiation from silicon solar cells we talk about electroluminescence or photoluminescence methods. Spectral response of using CCD camera with those methods is in band-gap infrared wave length area. The main idea of this paper is to analyze emitted infrared radiation silicon solar cell under the forward bias by polarization spectroscopy. This analysis opens up for potential next new questions in diagnostics defects silicon solar cells by luminescence methods.

Klíčová slova

Silicon defect, luminescence, defect detection.

Klíčová slova v angličtině

Silicon defect, luminescence, defect detection.

Autoři

STOJAN, R.; VANĚK, J.; MALÝ, M.

Vydáno

01.01.2014

Nakladatel

Horizon Research Publishing,USA

Místo

USA

ISSN

2332-3299

Periodikum

Universal Journal of Electrical and Electronic Engineering

Svazek

2

Číslo

1

Stát

Spojené státy americké

Strany od

18

Strany do

22

Strany počet

5

URL

http://www.hrpub.org/journals/jour_info.php?id=49

BibTex

@article{BUT103820,
  author="Radek {Stojan} and Jiří {Vaněk} and Martin {Malý}",
  title="Progression of Silicon Solar Cells Luminescence Diagnostic Methods",
  journal="Universal Journal of Electrical and Electronic Engineering",
  year="2014",
  volume="2",
  number="1",
  pages="18--22",
  doi="10.13189/ujeee.2014.020103",
  issn="2332-3299",
  url="http://www.hrpub.org/journals/jour_info.php?id=49"
}