Detail publikačního výsledku

Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques

BER, B.; BÁBOR, P.; BRUNKOV, P.; CHAPON, P.; DROZDOV, M.; DUDA, R.; KAZANTSEV, D.; POLKOVNIKOV, V.; YUNIN, P.; TOLSTOGOUZOV, A.

Originální název

Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques

Anglický název

Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

A round-robin characterization is reported on the sputter depth profiling of [60 x (3.0 nm Mo/0.3 nm B4C/3.7 nm Si)] and [60 x (3.5 nm Mo/3.5 nm Si)] stacks deposited on Si(111). Two different commercial secondary ion mass spectrometers with time-of-flight and magnetic-sector analyzers, a pulsed radio frequency glow discharge optical emission spectrometer, and a home-built time-of-flight low-energy ion scattering and quadrupole-based secondary ion mass spectrometer were used. The influence of the experimental conditions, especially the type and energy of sputter ions, on the depth profiles of Mo/Si nanostructures with and without B4C barrier layers is discussed in terms of depth resolution, modulation factor and rapidity of analysis. The pros and cons of each instrumental approach are summarized.

Anglický abstrakt

A round-robin characterization is reported on the sputter depth profiling of [60 x (3.0 nm Mo/0.3 nm B4C/3.7 nm Si)] and [60 x (3.5 nm Mo/3.5 nm Si)] stacks deposited on Si(111). Two different commercial secondary ion mass spectrometers with time-of-flight and magnetic-sector analyzers, a pulsed radio frequency glow discharge optical emission spectrometer, and a home-built time-of-flight low-energy ion scattering and quadrupole-based secondary ion mass spectrometer were used. The influence of the experimental conditions, especially the type and energy of sputter ions, on the depth profiles of Mo/Si nanostructures with and without B4C barrier layers is discussed in terms of depth resolution, modulation factor and rapidity of analysis. The pros and cons of each instrumental approach are summarized.

Klíčová slova

Sputter depth profiling; Glow discharge optical emission spectroscopy (GDOES); Mo/Si interferential mirror; Round-robin characterization; Secondary ion mass spectrometry (SIMS); Time-of-flight low-energy ion scattering (TOF-LEIS)

Klíčová slova v angličtině

Sputter depth profiling; Glow discharge optical emission spectroscopy (GDOES); Mo/Si interferential mirror; Round-robin characterization; Secondary ion mass spectrometry (SIMS); Time-of-flight low-energy ion scattering (TOF-LEIS)

Autoři

BER, B.; BÁBOR, P.; BRUNKOV, P.; CHAPON, P.; DROZDOV, M.; DUDA, R.; KAZANTSEV, D.; POLKOVNIKOV, V.; YUNIN, P.; TOLSTOGOUZOV, A.

Rok RIV

2014

Vydáno

14.06.2013

ISSN

0040-6090

Periodikum

Thin Solid Films

Svazek

540

Číslo

1

Stát

Nizozemsko

Strany od

96

Strany do

105

Strany počet

10

BibTex

@article{BUT100495,
  author="B. {Ber} and Petr {Bábor} and P.N. {Brunkov} and Patric {Chapon} and M.N. {Drozdov} and Radek {Duda} and D. {Kazantsev} and V.N. {Polkovnikov} and P. {Yunin} and A. {Tolstogouzov}",
  title="Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques",
  journal="Thin Solid Films",
  year="2013",
  volume="540",
  number="1",
  pages="96--105",
  issn="0040-6090"
}