Detail publikačního výsledku

Cold field emission electrode as a local probe of proximal microscopes-Investigation of defects in monocrystalline silicon solar cells

TOMÁNEK, P.; ŠKARVADA, P.; DALLAEVA, D.; GRMELA, L.; MACKŮ, R.; SMITH, S.

Originální název

Cold field emission electrode as a local probe of proximal microscopes-Investigation of defects in monocrystalline silicon solar cells

Anglický název

Cold field emission electrode as a local probe of proximal microscopes-Investigation of defects in monocrystalline silicon solar cells

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

Monocrystalline silicon is still very interesting material for solar cells fabrication due to its quality and external efficiency. Nevertheless during a tailoring of eligible silicon wafers, some inhomogeneities or irregularities emerge and provide defects which give trouble to good operation of solar panels. Generally, there are two classes of defects in silicon wafer-Material defects due to imperfections or irregularity in crystal structure (point, line, square or volume defects), and defects induced by wafer processing. To avoid a use of damaged cells, macroscopic and microscopic measurement techniques must be applied. In this paper we present a microscopic method combining electrical noise measurements with scanning probe localization of luminous micro-spots defects. The paper brings experimental results showing local electric and optical investigations of defects in etched monocrystalline silicon solar cells and a use of cold field emission tungsten electrode as a local probe for apertureless scanning near-field optical microscope.

Anglický abstrakt

Monocrystalline silicon is still very interesting material for solar cells fabrication due to its quality and external efficiency. Nevertheless during a tailoring of eligible silicon wafers, some inhomogeneities or irregularities emerge and provide defects which give trouble to good operation of solar panels. Generally, there are two classes of defects in silicon wafer-Material defects due to imperfections or irregularity in crystal structure (point, line, square or volume defects), and defects induced by wafer processing. To avoid a use of damaged cells, macroscopic and microscopic measurement techniques must be applied. In this paper we present a microscopic method combining electrical noise measurements with scanning probe localization of luminous micro-spots defects. The paper brings experimental results showing local electric and optical investigations of defects in etched monocrystalline silicon solar cells and a use of cold field emission tungsten electrode as a local probe for apertureless scanning near-field optical microscope.

Klíčová slova

Silicon solar cell, Defect, Near-field optically induced photocurrent, Scanning near-field optical microscopy, Cold-field emission electrode

Klíčová slova v angličtině

Silicon solar cell, Defect, Near-field optically induced photocurrent, Scanning near-field optical microscopy, Cold-field emission electrode

Autoři

TOMÁNEK, P.; ŠKARVADA, P.; DALLAEVA, D.; GRMELA, L.; MACKŮ, R.; SMITH, S.

Rok RIV

2014

Vydáno

21.05.2013

Nakladatel

MultiScience Publishing

Místo

Hebei, China

ISSN

1708-5284

Periodikum

World Journal of Engineering

Svazek

10

Číslo

2

Stát

Spojené království Velké Británie a Severního Irska

Strany od

119

Strany do

124

Strany počet

6

BibTex

@article{BUT98809,
  author="Pavel {Tománek} and Pavel {Škarvada} and Dinara {Sobola} and Lubomír {Grmela} and Robert {Macků} and Steve J. {Smith}",
  title="Cold field emission electrode as a local probe of proximal microscopes-Investigation of defects in monocrystalline silicon solar cells",
  journal="World Journal of Engineering",
  year="2013",
  volume="10",
  number="2",
  pages="119--124",
  issn="1708-5284"
}