Detail publikačního výsledku

Local investigation of defects in monocrystalline silicon solar cells

TOMÁNEK, P.; ŠKARVADA, P.; GRMELA, L.; MACKŮ, R.; SMITH, S.

Originální název

Local investigation of defects in monocrystalline silicon solar cells

Anglický název

Local investigation of defects in monocrystalline silicon solar cells

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

We present results of microscale localization and characterization of defects in monocrystalline silicon solar cells using LBIC and Scanning near-field optical microscopy (SNOM). Although etched silicon is still most effective material for solar cells, some problems with their use in solar plant installation persist due to the defects.

Anglický abstrakt

We present results of microscale localization and characterization of defects in monocrystalline silicon solar cells using LBIC and Scanning near-field optical microscopy (SNOM). Although etched silicon is still most effective material for solar cells, some problems with their use in solar plant installation persist due to the defects.

Klíčová slova

monocrystalline silicon, solar cell, defect, LBIC, SNOM

Klíčová slova v angličtině

monocrystalline silicon, solar cell, defect, LBIC, SNOM

Autoři

TOMÁNEK, P.; ŠKARVADA, P.; GRMELA, L.; MACKŮ, R.; SMITH, S.

Vydáno

06.07.2012

Nakladatel

IEEE USA

Místo

Seattle, USA

ISSN

0160-8371

Periodikum

Conference Record of the IEEE Photovoltaic Specialists Conference

Svazek

2012

Číslo

1

Stát

Spojené státy americké

Strany od

1686

Strany do

1690

Strany počet

5

BibTex

@article{BUT95657,
  author="Pavel {Tománek} and Pavel {Škarvada} and Lubomír {Grmela} and Robert {Macků} and Steve J. {Smith}",
  title="Local investigation of defects in monocrystalline silicon solar cells",
  journal="Conference Record of the IEEE Photovoltaic Specialists Conference",
  year="2012",
  volume="2012",
  number="1",
  pages="1686--1690",
  doi="10.1109/PVSC.2011.6186279",
  issn="0160-8371"
}