Theoretical and Experimental Investigation of SiC Thin Films Surface

Theoretical and Experimental Investigation of SiC Thin Films Surface

Článek recenzovaný mimo WoS a Scopus

This study describes morphology and structure of SiC thin films which are grown up by sublimation epitaxy in vacuum on the 6H-SiC substrates with thickness from tens of nanometers up to units of micrometers. Fashioned films are quite uniform in surface and volume. The crystal properties of the wafers and epitaxial layers are studied by electron diffraction investigation, X-ray techniques, and scanning probe microscopy. X-ray rocking curves show that structural perfection of SiC films is comparable with the structural perfection of monocrystalline 6H-SiC substrates. Calculated lattice parameters of epilayer by X-ray diffractometry also match with known values for 6H-SiC. Electron-diffraction measurement gives the confirmation of the crystallinity of the obtained layers and it is also proved by scanning probe microscopy. This technology allows making of defect treatment of the wafer in dependence on epitaxial conditions. Fundamental analysis in this field allows optimize conditions of thin films formation with prescribed properties and hence the using of them in the technology for elements of electronic engineering and by this reason the surface of monocrystalline SiC was analyzed.

This study describes morphology and structure of SiC thin films which are grown up by sublimation epitaxy in vacuum on the 6H-SiC substrates with thickness from tens of nanometers up to units of micrometers. Fashioned films are quite uniform in surface and volume. The crystal properties of the wafers and epitaxial layers are studied by electron diffraction investigation, X-ray techniques, and scanning probe microscopy. X-ray rocking curves show that structural perfection of SiC films is comparable with the structural perfection of monocrystalline 6H-SiC substrates. Calculated lattice parameters of epilayer by X-ray diffractometry also match with known values for 6H-SiC. Electron-diffraction measurement gives the confirmation of the crystallinity of the obtained layers and it is also proved by scanning probe microscopy. This technology allows making of defect treatment of the wafer in dependence on epitaxial conditions. Fundamental analysis in this field allows optimize conditions of thin films formation with prescribed properties and hence the using of them in the technology for elements of electronic engineering and by this reason the surface of monocrystalline SiC was analyzed.

silicon carbide, sublimation, atomic force microscopy

silicon carbide, sublimation, atomic force microscopy

DALLAEVA, D.; BILALOV, B.; TOMÁNEK, P.

2013

12.10.2012

1802-4564

ElectroScope

2012

5

Česká republika

1

5

5