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KUZDAS, J.; VOREL, P.
Originální název
Parasitic Effects in Battery Charger Using New SiC Diodes
Anglický název
Druh
Stať ve sborníku v databázi WoS či Scopus
Originální abstrakt
This article deals with a parasitic effects in highpower charger for electric vehicles. Because of the required minimum possible size and weight,while keeping the simplicity and reliability of the equipment, it was not easy to choose an appropriate design. It was used semiconductors on based SiC and switching frequency 100kHz. Due to the high switching frequency it was necessary to eliminate some parasitic effects occurring. This converter was implemented as a functional pattern, and then measurements were taken to verify the validation and functionality of the equipment.
Anglický abstrakt
Klíčová slova
SiC diode, Cool-MOS transistor, high-power charger, switching frequency.
Klíčová slova v angličtině
Autoři
Rok RIV
2013
Vydáno
15.10.2012
ISBN
978-80-214-4602-1
Kniha
XII. International Conference on Low Voltage Electrical Machines 2012
Edice
1
Strany od
110
Strany do
112
Strany počet
3
BibTex
@inproceedings{BUT95141, author="Jan {Kuzdas} and Pavel {Vorel}", title="Parasitic Effects in Battery Charger Using New SiC Diodes", booktitle="XII. International Conference on Low Voltage Electrical Machines 2012", year="2012", series="1", number="1", pages="110--112", isbn="978-80-214-4602-1" }