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ŠIKULA, J., DOBIS, P., PAVELKA, J., TACANO, M., HASHIGUCHI, S.
Originální název
Stochastic model for random tegraph signals in MOSFETS
Anglický název
Druh
Stať ve sborníku v databázi WoS či Scopus
Originální abstrakt
This paper investigates the emission and capture kinetics of random telegraf signals (RTS)in MOSFETs.The emphasis is on those signals showing a capture process which deviates from the standard Shockley-Read-Hall kinetics corresponding to a quadratic dependence on the number of carriers or on the drain current. A modified two-step approach is proposed which includes the capture of a carrier by trap located at the Si-SiO2 interface, folloved by a tunnelling process of the trapped carrier between the interface trap and a trap located in SiO2 layer.
Anglický abstrakt
Klíčová slova v angličtině
RTS noise, 1/f noise, MOSFET
Autoři
Vydáno
28.11.2003
Nakladatel
Meisei University Tokyo
Místo
Tokyo
Kniha
Proceeding of the 18th Forum of Science and Technology of Fluctuations
Strany od
1
Strany počet
4
BibTex
@inproceedings{BUT9409, author="Josef {Šikula} and Pavel {Dobis} and Jan {Pavelka} and Munecazu {Tacano} and Sumihisa {Hashiguchi}", title="Stochastic model for random tegraph signals in MOSFETS", booktitle="Proceeding of the 18th Forum of Science and Technology of Fluctuations", year="2003", pages="4", publisher="Meisei University Tokyo", address="Tokyo" }