Detail publikačního výsledku

Polycrystalline Silicon Layers with Enhanced Thermal Stability

BÁBOR, P.; LYSÁČEK, D.; ŠIK, J.

Originální název

Polycrystalline Silicon Layers with Enhanced Thermal Stability

Anglický název

Polycrystalline Silicon Layers with Enhanced Thermal Stability

Druh

Článek recenzovaný mimo WoS a Scopus

Originální abstrakt

We report on a new method of external gettering in silicon substrate for semiconductor applications. The proposed method is based on the deposition of a multilayer system formed by introducing a number of thin buried silicon oxide layers into the thick polycrystalline silicon layer deposited on the wafer backside. Oxide films of a few nanometer thicknesses significantly retard both the grain growth and subsequent loss of the gettering capability of the polycrystalline silicon layer during high temperature annealing. The mechanisms of the grain growth and the influence of the embedded oxide layers on the gettering function in the multilayer system are discussed. We used scanning electron microscopy and transmission electron microscopy for the characterization of the multilayer system, and intentional contamination for demonstration of the gettering properties.

Anglický abstrakt

We report on a new method of external gettering in silicon substrate for semiconductor applications. The proposed method is based on the deposition of a multilayer system formed by introducing a number of thin buried silicon oxide layers into the thick polycrystalline silicon layer deposited on the wafer backside. Oxide films of a few nanometer thicknesses significantly retard both the grain growth and subsequent loss of the gettering capability of the polycrystalline silicon layer during high temperature annealing. The mechanisms of the grain growth and the influence of the embedded oxide layers on the gettering function in the multilayer system are discussed. We used scanning electron microscopy and transmission electron microscopy for the characterization of the multilayer system, and intentional contamination for demonstration of the gettering properties.

Klíčová slova

Polycrystalline silicon, Multilayer structure, Gettering, Chemical vapor deposition

Klíčová slova v angličtině

Polycrystalline silicon, Multilayer structure, Gettering, Chemical vapor deposition

Autoři

BÁBOR, P.; LYSÁČEK, D.; ŠIK, J.

Rok RIV

2012

Vydáno

16.08.2011

ISSN

1662-9779

Periodikum

Solid State Phenomena

Svazek

178-179

Číslo

385

Stát

Švýcarská konfederace

Strany od

385

Strany do

391

Strany počet

6

BibTex

@article{BUT89995,
  author="Petr {Bábor} and David {Lysáček} and Jan {Šik}",
  title="Polycrystalline Silicon Layers with Enhanced Thermal Stability",
  journal="Solid State Phenomena",
  year="2011",
  volume="178-179",
  number="385",
  pages="385--391",
  issn="1012-0394"
}