Detail publikace

1/f Noise in InAs/GaAs Quantum Dots and InGaAs/GaAs/InGaP Quantum Well LEDs and in quantum well laser diodes

TOMÁNEK, P., DOBIS, P., GRMELA, L.

Originální název

1/f Noise in InAs/GaAs Quantum Dots and InGaAs/GaAs/InGaP Quantum Well LEDs and in quantum well laser diodes

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Semiconductor light emitting diodes (LEDs) and lasers based on self-organized quantum dots (QD) are very promising emitters with an enhanced radiation hardness. However, this promising feature is devaluated by the large dispersion in size, shape and stoichiometric composition of self-organized quantum dots and surrounding material. The experimental results of LF noise investigation of LEDs based on InAs quantum dots, LEDs based on InAs quantum dots with additional In0.2Ga0.8As quantum well (QW), laser diodes based on In0.2Ga0.8As quantum wells are presented in this work.

Klíčová slova

noise, quantum dots, quantum well, laser diode, LED

Autoři

TOMÁNEK, P., DOBIS, P., GRMELA, L.

Rok RIV

2003

Vydáno

16. 10. 2003

Nakladatel

MtF STU Trnava

Místo

Bratislava

ISBN

80-277-1949-8

Kniha

CO-MAT-TECH 2003, 11th International scientific conference

Strany od

1063

Strany do

1066

Strany počet

4

BibTex

@inproceedings{BUT8334,
  author="Pavel {Tománek} and Pavel {Dobis} and Lubomír {Grmela}",
  title="1/f Noise in InAs/GaAs Quantum Dots and InGaAs/GaAs/InGaP Quantum Well LEDs and in quantum well laser diodes",
  booktitle="CO-MAT-TECH 2003, 11th International scientific conference",
  year="2003",
  pages="4",
  publisher="MtF STU Trnava",
  address="Bratislava",
  isbn="80-277-1949-8"
}