Detail publikace

Capacitance-voltage analysis for silicon solar cells

CHOBOLA, Z. IBRAHIM, A.

Originální název

Capacitance-voltage analysis for silicon solar cells

Anglický název

Capacitance-voltage analysis for silicon solar cells

Jazyk

en

Originální abstrakt

Studie of capacitance associated the depletion region of a Schottky barrier or an abrupt junction provide extensive information on the concentrations and charakcteristics of electrically active centres in epitaxial layers and the near surface region of bulk semiconductors.

Anglický abstrakt

Studie of capacitance associated the depletion region of a Schottky barrier or an abrupt junction provide extensive information on the concentrations and charakcteristics of electrically active centres in epitaxial layers and the near surface region of bulk semiconductors.

Dokumenty

BibTex 


@inproceedings{BUT7041,
  author="Zdeněk {Chobola} and Ali {Ibrahim}",
  title="Capacitance-voltage analysis for silicon solar cells",
  annote="Studie of capacitance associated the depletion region of a Schottky barrier or an abrupt junction provide extensive information on the concentrations and charakcteristics of electrically active centres in epitaxial layers and the near surface region of bulk semiconductors.",
  address="Vysoké učení technické v Brně",
  booktitle="Nové trendy ve fyzice",
  chapter="7041",
  institution="Vysoké učení technické v Brně",
  year="2001",
  month="november",
  pages="84",
  publisher="Vysoké učení technické v Brně",
  type="conference paper"
}