Detail publikačního výsledku

Evaluation of Ni/n-SiC ohmic contacts by current noise measurements

TACANO, M., TANUMA, N., YOKOKURA, S., HASHIGUCHI, S., ŠIKULA, J., MATSUI, T.

Originální název

Evaluation of Ni/n-SiC ohmic contacts by current noise measurements

Anglický název

Evaluation of Ni/n-SiC ohmic contacts by current noise measurements

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

Ohmic contacts were prepared on the Si surface of the wide band gap semiconductor n-SiC etched by Ar ECR plasma and low-frequency current-noise characteristics of ohmic contacts were investigated.

Anglický abstrakt

Ohmic contacts were prepared on the Si surface of the wide band gap semiconductor n-SiC etched by Ar ECR plasma and low-frequency current-noise characteristics of ohmic contacts were investigated.

Klíčová slova v angličtině

contacts, noise, n-SiC

Autoři

TACANO, M., TANUMA, N., YOKOKURA, S., HASHIGUCHI, S., ŠIKULA, J., MATSUI, T.

Vydáno

01.01.2001

Nakladatel

World Scientific

Místo

Gainesville, USA

ISBN

981-02-4677-3

Kniha

Proceedings of the 16th Int Conf Noise in Physical Systems and 1/f Fluctuations ICNF 2001

Strany od

119

Strany počet

4

BibTex

@inproceedings{BUT6833,
  author="Munecazu {Tacano} and Nobuhisa {Tanuma} and Saburo {Yokokura} and Sumihisa {Hashiguchi} and Josef {Šikula} and Toshiaki {Matsui}",
  title="Evaluation of Ni/n-SiC ohmic contacts by current noise measurements",
  booktitle="Proceedings of the 16th Int Conf Noise in Physical Systems and 1/f Fluctuations ICNF 2001",
  year="2001",
  pages="4",
  publisher="World Scientific",
  address="Gainesville, USA",
  isbn="981-02-4677-3"
}