Fabrication of nanostructures by AFM local Oxidation

Fabrication of nanostructures by AFM local Oxidation

Stať ve sborníku v databázi WoS či Scopus

In the paper AFM studies of microstructures etched by ion beams into Si and Au surfaces, and AFM local anodic oxidation of Ti thin films is presented. Using the AFM technique the etching limits of inert atoms in production of silicon and silver grids were found. It was proved that the height of Ti oxide lines fabricated by AFM increases linearly with the voltage between a tip and a sample. On the other hand, the half-width of the lines did not depend linearly on this voltage. The results are useful for studies of quantum effects in nanostructures and experiments in fabrication of nanoelectronic devices (e.g. SET).

In the paper AFM studies of microstructures etched by ion beams into Si and Au surfaces, and AFM local anodic oxidation of Ti thin films is presented. Using the AFM technique the etching limits of inert atoms in production of silicon and silver grids were found. It was proved that the height of Ti oxide lines fabricated by AFM increases linearly with the voltage between a tip and a sample. On the other hand, the half-width of the lines did not depend linearly on this voltage. The results are useful for studies of quantum effects in nanostructures and experiments in fabrication of nanoelectronic devices (e.g. SET).

AFM fabrication, local anodic oxidation, oxide nanostructures

LOPOUR, F., ŠIKOLA, T., ŠKODA, D.

2011

15.11.2001

FEI VUT v Brně

Brno

80-214-1992-X

Sborník příspěvků konference Nové trendy ve fyzice

394

6