Detail publikačního výsledku

The model of metal oxide semiconductor transistor for first step of circuits design

ZÁVODNÝ, L.

Originální název

The model of metal oxide semiconductor transistor for first step of circuits design

Anglický název

The model of metal oxide semiconductor transistor for first step of circuits design

Druh

Konferenční sborník (ne stať)

Originální abstrakt

This paper deals with new simply static model of Floating, N-channel Metal Oxide Semiconductor Transistor for special using in first-step of circuits design. Created model is maximal simple but with guaranteed accuracy.

Anglický abstrakt

This paper deals with new simply static model of Floating, N-channel Metal Oxide Semiconductor Transistor for special using in first-step of circuits design. Created model is maximal simple but with guaranteed accuracy.

Klíčová slova

metal oxide semicondactor tranzistor model design

Klíčová slova v angličtině

metal oxide semicondactor tranzistor model design

Autoři

ZÁVODNÝ, L.

Vydáno

05.05.2002

Nakladatel

Department of Radioelektronics, FEI SUT Bratislava

Místo

Bratislava

ISBN

80-227-1700-2

Kniha

RADIOELEKTRONIKA 2002 - Conference Proceedings

Strany od

140

Strany počet

3

BibTex

@proceedings{BUT64022,
  editor="Luděk {Závodný}",
  title="The model of metal oxide semiconductor transistor for first step of circuits design",
  year="2002",
  number="1",
  pages="3",
  publisher="Department of Radioelektronics, FEI SUT Bratislava",
  address="Bratislava",
  isbn="80-227-1700-2"
}