Detail publikace

Pressure Sensor with Si3N4 Diaphragm and Optoelectronic Sensing

BENEŠ, P., MATĚJKA, F., VRBA, R., KOLAŘÍK, V.

Originální název

Pressure Sensor with Si3N4 Diaphragm and Optoelectronic Sensing

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Sensitive pressure sensor with nitride membrane and optoelectronic read-out system is described. Measured pressure is transformed into thick layer nitride membrane deflection. Nitride membrane serves as a mirror for laser beam and can move reflected laser mark. Mark’s position is sensed using position sensing device – fotolateral diode. Diode double current signal is amplified and conditioned digitally by ADuC 812 microcomputer. This one chip microcomputer provides an IEEE 1451.2 interface.

Klíčová slova v angličtině

pressure, nitride membrane, optoelectronic, standard IEEE 1451

Autoři

BENEŠ, P., MATĚJKA, F., VRBA, R., KOLAŘÍK, V.

Rok RIV

2001

Vydáno

13. 9. 2001

Nakladatel

Instituto de Telecomunicacoes

Místo

Lisbon, Portugal

ISBN

972-98115-4-7

Kniha

TEMI 2001 trends in electrical Measurement and Instrumentation

Strany od

327

Strany do

329

Strany počet

3

BibTex

@inproceedings{BUT6231,
  author="Petr {Beneš} and František {Matějka} and Radimír {Vrba} and Vladimír {Kolařík}",
  title="Pressure Sensor with Si3N4 Diaphragm and Optoelectronic Sensing",
  booktitle="TEMI 2001 trends in electrical Measurement and Instrumentation",
  year="2001",
  pages="3",
  publisher="Instituto de Telecomunicacoes",
  address="Lisbon, Portugal",
  isbn="972-98115-4-7"
}