Detail publikačního výsledku

1/f noise models and low-frequency noise characteristics of InAlAs/InGaAs devices

PAVELKA, J.; TACANO, M.; TANUMA, N.; ŠIKULA, J.

Originální název

1/f noise models and low-frequency noise characteristics of InAlAs/InGaAs devices

Anglický název

1/f noise models and low-frequency noise characteristics of InAlAs/InGaAs devices

Druh

Abstrakt

Originální abstrakt

Transport and low frequency noise characteristics of In0.52Al0.48As/InxGa1-xAs heterostructures were measured in wide temperature range (15 K to 450 K) and experi-mental results compared with intrinsic 1/f noise models, estimating mobility fluctuations due to various scattering processes.

Anglický abstrakt

Transport and low frequency noise characteristics of In0.52Al0.48As/InxGa1-xAs heterostructures were measured in wide temperature range (15 K to 450 K) and experi-mental results compared with intrinsic 1/f noise models, estimating mobility fluctuations due to various scattering processes.

Klíčová slova

1/f noise, g-r noise, InGaAs, compound semiconductors

Klíčová slova v angličtině

1/f noise, g-r noise, InGaAs, compound semiconductors

Autoři

PAVELKA, J.; TACANO, M.; TANUMA, N.; ŠIKULA, J.

Rok RIV

2011

Vydáno

31.05.2010

Nakladatel

ISCS

Místo

Takamatsu, Japonsko

Kniha

The 37th International Symposium on Compound Semiconductors (ISCS 2010)

Strany od

25

Strany do

25

Strany počet

1

BibTex

@misc{BUT61010,
  author="Jan {Pavelka} and Munecazu {Tacano} and Nobuhisa {Tanuma} and Josef {Šikula}",
  title="1/f noise models and low-frequency noise characteristics of InAlAs/InGaAs devices",
  booktitle="The 37th International Symposium on Compound Semiconductors (ISCS 2010)",
  year="2010",
  pages="25--25",
  publisher="ISCS",
  address="Takamatsu, Japonsko",
  note="Abstract"
}