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Detail publikačního výsledku
OTEVŘELOVÁ, D., DOBIS, P., BRÜSTLOVÁ, J., TOMÁNEK, P.
Originální název
Near-field photoluminescence as high resolution diagnostics of semiconductor structures
Anglický název
Druh
Stať ve sborníku v databázi WoS či Scopus
Originální abstrakt
Scanning Near-field Optical Microscope, in which an uncoated single-mode fiber tip is used both as nanosource to excite the semiconductor sample and as nanoprobe to investigate characteristics of the structure and to pick up the photoluminescence (PL) reflected from the sample, is applied for the diagnostics of the defects in semiconductor devices. Using the high lateral resolution of the microscope with fast micro-photoluminiscence response, it is possible to locate non-luminescence defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured spectral PL intensity are also discussed.
Anglický abstrakt
Klíčová slova v angličtině
Scanning near-field optical microscope, photoluminescence, quantum well structure, spectral photoluminescence intensity, subwavelength resolution
Autoři
Vydáno
27.06.2001
Nakladatel
VUTIUM
Místo
Brno
ISBN
80-24-14-1892-3
Kniha
Proceedings of Materials structure and micromechanics of fracture
Strany od
439
Strany počet
5
BibTex
@inproceedings{BUT6096, author="Dana {Otevřelová} and Pavel {Dobis} and Jitka {Brüstlová} and Pavel {Tománek}", title="Near-field photoluminescence as high resolution diagnostics of semiconductor structures", booktitle="Proceedings of Materials structure and micromechanics of fracture", year="2001", pages="5", publisher="VUTIUM", address="Brno", isbn="80-24-14-1892-3" }