Detail publikačního výsledku

Local photoluminescence measurements of semiconductor surface defects

TOMÁNEK, P., BENEŠOVÁ, M., DOBIS, P., BRÜSTLOVÁ, J., UHDEOVÁ, N.

Originální název

Local photoluminescence measurements of semiconductor surface defects

Anglický název

Local photoluminescence measurements of semiconductor surface defects

Druh

Abstrakt

Originální abstrakt

The applicability of Near-field scanning optical microscopy (NSOM) for optical characterization of semiconductors has been discussed. The NSOM technique and some of its properties relevant to real-time in-situ measurements are reviewed. Several optical characterization methods widely used in the far-field are evaluated for their use with NSOM.

Anglický abstrakt

The applicability of Near-field scanning optical microscopy (NSOM) for optical characterization of semiconductors has been discussed. The NSOM technique and some of its properties relevant to real-time in-situ measurements are reviewed. Several optical characterization methods widely used in the far-field are evaluated for their use with NSOM.

Klíčová slova

photoluminescence, semiconductor, surface deffect, local measurement

Klíčová slova v angličtině

photoluminescence, semiconductor, surface deffect, local measurement

Autoři

TOMÁNEK, P., BENEŠOVÁ, M., DOBIS, P., BRÜSTLOVÁ, J., UHDEOVÁ, N.

Vydáno

15.09.2003

Místo

Chernivtsy

Kniha

Correlation optics 6

Edice

Neuveden

Svazek

Neuveden

Strany od

56

Strany počet

1

BibTex

@misc{BUT60177,
  author="Pavel {Tománek} and Markéta {Benešová} and Pavel {Dobis} and Jitka {Brüstlová} and Naděžda {Uhdeová}",
  title="Local photoluminescence measurements of semiconductor surface defects",
  booktitle="Correlation optics 6",
  year="2003",
  series="Neuveden",
  edition="Neuveden",
  volume="Neuveden",
  pages="1",
  address="Chernivtsy",
  note="Abstract"
}