Detail publikačního výsledku

MOSFET Modeling for Curcuit Simulations

MUSIL, V., PROKOP, R., HUB, P.

Originální název

MOSFET Modeling for Curcuit Simulations

Anglický název

MOSFET Modeling for Curcuit Simulations

Druh

Stať ve sborníku v databázi WoS či Scopus

Originální abstrakt

In this paper an overview of MOSFET modeling circuit simulation is presented. After discussing some of the implications of analog and low-power applications, the history of the MOS models comonly used in SPICE-like circuit simulators is presented, followed by a discussion of the evolution of strategies for modeling the geometry dependence of MOSFET characteristics. The growth of complexity and requirements for future MOS models are also considered.

Anglický abstrakt

In this paper an overview of MOSFET modeling circuit simulation is presented. After discussing some of the implications of analog and low-power applications, the history of the MOS models comonly used in SPICE-like circuit simulators is presented, followed by a discussion of the evolution of strategies for modeling the geometry dependence of MOSFET characteristics. The growth of complexity and requirements for future MOS models are also considered.

Klíčová slova v angličtině

integrated circuits, MOS transistor, circuit model, modeling, SPICE

Autoři

MUSIL, V., PROKOP, R., HUB, P.

Vydáno

01.01.2002

Nakladatel

Vysoké učení technické v Brně

Místo

Brno

ISBN

80-214-2180-0

Kniha

ELECTRONIC DEVICES AND SYSTEMS 02 - PROCEEDINGS

Strany od

259

Strany počet

4

BibTex

@inproceedings{BUT4958,
  author="Vladislav {Musil} and Roman {Prokop} and Petr {Hub}",
  title="MOSFET Modeling for Curcuit Simulations",
  booktitle="ELECTRONIC DEVICES AND SYSTEMS 02 - PROCEEDINGS",
  year="2002",
  number="1",
  pages="4",
  publisher="Vysoké učení technické v Brně",
  address="Brno",
  isbn="80-214-2180-0"
}